A DLTS study of hydrogen doped czochralski-grown silicon
In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The...
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| Veröffentlicht in: | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2015-12, Vol.365, p.240-243 |
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| container_title | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms |
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| creator | Jelinek, M. Laven, J.G. Kirnstoetter, S. Schustereder, W. Schulze, H.-J. Rommel, M. Frey, L. |
| description | In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10–15μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials. |
| doi_str_mv | 10.1016/j.nimb.2015.07.078 |
| format | Article |
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| ispartof | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-12, Vol.365, p.240-243 |
| issn | 0168-583X 1872-9584 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Annealing Beam interactions Coordination compounds Deep level defects Formations Hydrogen Proton implantation Self-interstitials Silicon Spreading |
| title | A DLTS study of hydrogen doped czochralski-grown silicon |
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