PECVD low stress silicon nitride analysis and optimization for the fabrication of CMUT devices

Two technological options to achieve a high deposition rate, low stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride to be used in capacitive micromachined ultrasonic transducers (CMUT) fabrication are investigated and presented. Both options are developed and implemented on sta...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of micromechanics and microengineering 2015-01, Vol.25 (1), p.15012-12
Hauptverfasser:	Bagolini, Alvise, Savoia, Alessandro Stuart, Picciotto, Antonino, Boscardin, Maurizio, Bellutti, Pierluigi, Lamberti, Nicola, Caliano, Giosuè
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition CMUT Density Deposition Devices MEMS devices microfabrication mixed frequency silicon nitride Nitrides PECVD Residual stress Silicon nitride Stresses
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!