An improved GGNMOS triggered SCR for high holding voltage ESD protection applications
Developing an electrostatic discharge（ESD） protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor（CMOS） technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor（GGNMOS） transistor trigger...
Gespeichert in:
| Veröffentlicht in: | Chinese physics B 2015-10, Vol.24 (10), p.591-593 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 593 |
|---|---|
| container_issue | 10 |
| container_start_page | 591 |
| container_title | Chinese physics B |
| container_volume | 24 |
| creator | 张帅 董树荣 吴晓京 曾杰 钟雷 吴健 |
| description | Developing an electrostatic discharge（ESD） protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor（CMOS） technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor（GGNMOS） transistor triggered silicon-controlled rectifier（SCR）structure, named GGSCR, is proposed for high holding voltage ESD protection applications. The GGSCR demonstrates a double snapback behavior as a result of progressive trigger-on of the GGNMOS and SCR. The double snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device. |
| doi_str_mv | 10.1088/1674-1056/24/10/108502 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1793254478</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>666025475</cqvip_id><sourcerecordid>1793254478</sourcerecordid><originalsourceid>FETCH-LOGICAL-c358t-23be2ba2bbd71eee59e2b7fab253f19a086ea76aa5bb2a8c1606c68109c874443</originalsourceid><addsrcrecordid>eNqFkF9LwzAUxYMoOKdfQYJPvtTlf7PHMecUpgPnnkPapW1G13RJN_Dbm7KxV-FCbi7n5Nz8AHjE6AUjKUdYpCzBiIsRYSOMYkmOyBUYEMRlQiVl12BwEd2CuxC2CAmMCB2A9aSBdtd6dzQbOJ9_fS5XsPO2LI2Pg9X0GxbOw8qWFaxcvbFNCY-u7nRp4Gz1CqOxM3lnXQN129Y2130f7sFNoetgHs7nEKzfZj_T92SxnH9MJ4skp1x2CaGZIZkmWbZJsTGGj-M1LXRGOC3wWCMpjE6F1jzLiJY5FkjkQmI0zmXKGKND8Hx6N-6xP5jQqZ0Nualr3Rh3CAqnY0o4Y6mMUnGS5t6F4E2hWm932v8qjFTPUfWIVI9IEXYeRo7RSE5G61q1dQffxB_9b3o6p1WuKfcR2yVOCIHiTimnfx91f48</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1793254478</pqid></control><display><type>article</type><title>An improved GGNMOS triggered SCR for high holding voltage ESD protection applications</title><source>IOP Publishing Journals</source><creator>张帅 董树荣 吴晓京 曾杰 钟雷 吴健</creator><creatorcontrib>张帅 董树荣 吴晓京 曾杰 钟雷 吴健</creatorcontrib><description>Developing an electrostatic discharge（ESD） protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor（CMOS） technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor（GGNMOS） transistor triggered silicon-controlled rectifier（SCR）structure, named GGSCR, is proposed for high holding voltage ESD protection applications. The GGSCR demonstrates a double snapback behavior as a result of progressive trigger-on of the GGNMOS and SCR. The double snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>EISSN: 1741-4199</identifier><identifier>DOI: 10.1088/1674-1056/24/10/108502</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>Devices ; Electric potential ; electrostatic discharge ; Electrostatic discharges ; ESD保护 ; GGNMOS ; GGSCR ; holding voltage ; Latch-up ; Metal oxide semiconductors ; Metal oxides ; SCR ; Semiconductors ; Voltage ; 互补金属氧化物半导体 ; 可控硅整流器 ; 应用 ; 维持电压 ; 连续触发</subject><ispartof>Chinese physics B, 2015-10, Vol.24 (10), p.591-593</ispartof><rights>2015 Chinese Physical Society and IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-23be2ba2bbd71eee59e2b7fab253f19a086ea76aa5bb2a8c1606c68109c874443</citedby><cites>FETCH-LOGICAL-c358t-23be2ba2bbd71eee59e2b7fab253f19a086ea76aa5bb2a8c1606c68109c874443</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1674-1056/24/10/108502/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846</link.rule.ids></links><search><creatorcontrib>张帅 董树荣 吴晓京 曾杰 钟雷 吴健</creatorcontrib><title>An improved GGNMOS triggered SCR for high holding voltage ESD protection applications</title><title>Chinese physics B</title><addtitle>ChinPhysB</addtitle><addtitle>Chinese Physics</addtitle><description>Developing an electrostatic discharge（ESD） protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor（CMOS） technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor（GGNMOS） transistor triggered silicon-controlled rectifier（SCR）structure, named GGSCR, is proposed for high holding voltage ESD protection applications. The GGSCR demonstrates a double snapback behavior as a result of progressive trigger-on of the GGNMOS and SCR. The double snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device.</description><subject>Devices</subject><subject>Electric potential</subject><subject>electrostatic discharge</subject><subject>Electrostatic discharges</subject><subject>ESD保护</subject><subject>GGNMOS</subject><subject>GGSCR</subject><subject>holding voltage</subject><subject>Latch-up</subject><subject>Metal oxide semiconductors</subject><subject>Metal oxides</subject><subject>SCR</subject><subject>Semiconductors</subject><subject>Voltage</subject><subject>互补金属氧化物半导体</subject><subject>可控硅整流器</subject><subject>应用</subject><subject>维持电压</subject><subject>连续触发</subject><issn>1674-1056</issn><issn>2058-3834</issn><issn>1741-4199</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqFkF9LwzAUxYMoOKdfQYJPvtTlf7PHMecUpgPnnkPapW1G13RJN_Dbm7KxV-FCbi7n5Nz8AHjE6AUjKUdYpCzBiIsRYSOMYkmOyBUYEMRlQiVl12BwEd2CuxC2CAmMCB2A9aSBdtd6dzQbOJ9_fS5XsPO2LI2Pg9X0GxbOw8qWFaxcvbFNCY-u7nRp4Gz1CqOxM3lnXQN129Y2130f7sFNoetgHs7nEKzfZj_T92SxnH9MJ4skp1x2CaGZIZkmWbZJsTGGj-M1LXRGOC3wWCMpjE6F1jzLiJY5FkjkQmI0zmXKGKND8Hx6N-6xP5jQqZ0Nualr3Rh3CAqnY0o4Y6mMUnGS5t6F4E2hWm932v8qjFTPUfWIVI9IEXYeRo7RSE5G61q1dQffxB_9b3o6p1WuKfcR2yVOCIHiTimnfx91f48</recordid><startdate>20151001</startdate><enddate>20151001</enddate><creator>张帅 董树荣 吴晓京 曾杰 钟雷 吴健</creator><general>IOP Publishing</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20151001</creationdate><title>An improved GGNMOS triggered SCR for high holding voltage ESD protection applications</title><author>张帅 董树荣 吴晓京 曾杰 钟雷 吴健</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-23be2ba2bbd71eee59e2b7fab253f19a086ea76aa5bb2a8c1606c68109c874443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Devices</topic><topic>Electric potential</topic><topic>electrostatic discharge</topic><topic>Electrostatic discharges</topic><topic>ESD保护</topic><topic>GGNMOS</topic><topic>GGSCR</topic><topic>holding voltage</topic><topic>Latch-up</topic><topic>Metal oxide semiconductors</topic><topic>Metal oxides</topic><topic>SCR</topic><topic>Semiconductors</topic><topic>Voltage</topic><topic>互补金属氧化物半导体</topic><topic>可控硅整流器</topic><topic>应用</topic><topic>维持电压</topic><topic>连续触发</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>张帅 董树荣 吴晓京 曾杰 钟雷 吴健</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>张帅 董树荣 吴晓京 曾杰 钟雷 吴健</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An improved GGNMOS triggered SCR for high holding voltage ESD protection applications</atitle><jtitle>Chinese physics B</jtitle><stitle>ChinPhysB</stitle><addtitle>Chinese Physics</addtitle><date>2015-10-01</date><risdate>2015</risdate><volume>24</volume><issue>10</issue><spage>591</spage><epage>593</epage><pages>591-593</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><eissn>1741-4199</eissn><abstract>Developing an electrostatic discharge（ESD） protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor（CMOS） technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor（GGNMOS） transistor triggered silicon-controlled rectifier（SCR）structure, named GGSCR, is proposed for high holding voltage ESD protection applications. The GGSCR demonstrates a double snapback behavior as a result of progressive trigger-on of the GGNMOS and SCR. The double snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device.</abstract><pub>IOP Publishing</pub><doi>10.1088/1674-1056/24/10/108502</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1674-1056 |
| ispartof | Chinese physics B, 2015-10, Vol.24 (10), p.591-593 |
| issn | 1674-1056 2058-3834 1741-4199 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1793254478 |
| source | IOP Publishing Journals |
| subjects | Devices Electric potential electrostatic discharge Electrostatic discharges ESD保护 GGNMOS GGSCR holding voltage Latch-up Metal oxide semiconductors Metal oxides SCR Semiconductors Voltage 互补金属氧化物半导体 可控硅整流器 应用 维持电压 连续触发 |
| title | An improved GGNMOS triggered SCR for high holding voltage ESD protection applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T19%3A02%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=An%20improved%20GGNMOS%20triggered%20SCR%20for%20high%20holding%20voltage%20ESD%20protection%20applications&rft.jtitle=Chinese%20physics%20B&rft.au=%E5%BC%A0%E5%B8%85%20%E8%91%A3%E6%A0%91%E8%8D%A3%20%E5%90%B4%E6%99%93%E4%BA%AC%20%E6%9B%BE%E6%9D%B0%20%E9%92%9F%E9%9B%B7%20%E5%90%B4%E5%81%A5&rft.date=2015-10-01&rft.volume=24&rft.issue=10&rft.spage=591&rft.epage=593&rft.pages=591-593&rft.issn=1674-1056&rft.eissn=2058-3834&rft_id=info:doi/10.1088/1674-1056/24/10/108502&rft_dat=%3Cproquest_cross%3E1793254478%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1793254478&rft_id=info:pmid/&rft_cqvip_id=666025475&rfr_iscdi=true |