Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes
We report on the analysis of current voltage (I–V) measurements performed on Pd/ZnO Schottky barrier diodes (SBDs) in the 80–320K temperature range. Assuming thermionic emission (TE) theory, the forward bias I–V characteristics were analysed to extract Pd/ZnO Schottky diode parameters. Comparing Che...
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| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2016-01, Vol.480, p.58-62 |
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| container_title | Physica. B, Condensed matter |
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| creator | Mayimele, M A van Rensburg, J P. Janse Auret, F D Diale, M |
| description | We report on the analysis of current voltage (I–V) measurements performed on Pd/ZnO Schottky barrier diodes (SBDs) in the 80–320K temperature range. Assuming thermionic emission (TE) theory, the forward bias I–V characteristics were analysed to extract Pd/ZnO Schottky diode parameters. Comparing Cheung’s method in the extraction of the series resistance with Ohm’s law, it was observed that at lower temperatures (T200K). The barrier height and the ideality factor decreased and increased, respectively, with decrease in temperature, attributed to the existence of barrier height inhomogeneity. Such inhomogeneity was explained based on TE with the assumption of Gaussian distribution of barrier heights with a mean barrier height of 0.99eV and a standard deviation of 0.02eV. A mean barrier height of 0.11eV and Richardson constant value of 37Acm−2K−2 were determined from the modified Richardson plot that considers the Gaussian distribution of barrier heights. |
| doi_str_mv | 10.1016/j.physb.2015.07.034 |
| format | Article |
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Such inhomogeneity was explained based on TE with the assumption of Gaussian distribution of barrier heights with a mean barrier height of 0.99eV and a standard deviation of 0.02eV. A mean barrier height of 0.11eV and Richardson constant value of 37Acm−2K−2 were determined from the modified Richardson plot that considers the Gaussian distribution of barrier heights.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2015.07.034</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Barrier inhomogeneities ; Barriers ; Condensed matter ; Diodes ; Extraction ; Gaussian distribution & Modified Richardson plot ; Inhomogeneity ; Normal distribution ; Palladium ; Series resistance ; Zinc oxide</subject><ispartof>Physica. 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Janse</creatorcontrib><creatorcontrib>Auret, F D</creatorcontrib><creatorcontrib>Diale, M</creatorcontrib><title>Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes</title><title>Physica. B, Condensed matter</title><description>We report on the analysis of current voltage (I–V) measurements performed on Pd/ZnO Schottky barrier diodes (SBDs) in the 80–320K temperature range. Assuming thermionic emission (TE) theory, the forward bias I–V characteristics were analysed to extract Pd/ZnO Schottky diode parameters. Comparing Cheung’s method in the extraction of the series resistance with Ohm’s law, it was observed that at lower temperatures (T<180K) the series resistance decreased with increasing temperature, the absolute minimum was reached near 180K and increases linearly with temperature at high temperatures (T>200K). The barrier height and the ideality factor decreased and increased, respectively, with decrease in temperature, attributed to the existence of barrier height inhomogeneity. Such inhomogeneity was explained based on TE with the assumption of Gaussian distribution of barrier heights with a mean barrier height of 0.99eV and a standard deviation of 0.02eV. A mean barrier height of 0.11eV and Richardson constant value of 37Acm−2K−2 were determined from the modified Richardson plot that considers the Gaussian distribution of barrier heights.</description><subject>Barrier inhomogeneities</subject><subject>Barriers</subject><subject>Condensed matter</subject><subject>Diodes</subject><subject>Extraction</subject><subject>Gaussian distribution & Modified Richardson plot</subject><subject>Inhomogeneity</subject><subject>Normal distribution</subject><subject>Palladium</subject><subject>Series resistance</subject><subject>Zinc oxide</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kD9v2zAQxYkiBeqm_QRdOHaRwhNFyxoyBEH_AQESIO3ShaDIU01HJlUeHcRb1879hvkkoePOueWAu_ce8H6MfQBRg4Dl2aae13sa6kaAqkVXC9m-YgtYdbJqQKoTthB9A1WrmuUb9pZoI8pABwv29yKYaU-eeBx5xu2MyeRdwsrhjMGZkLndpYQhP_75dx-nbH4ht2uTjM2YPGVviZvgOD7kw83HcEii8kPiCUtyNsEi94HfuLOf4Zrf2nXM-W7PB5OKKnHno0N6x16PZiJ8_3-fsh-fP32__FpdXX_5dnlxVdlWQa76FgDNMKgOVtiJfuiFtcI2VgrTuBa6oZwGsRQwghqxleBs2_RCLVfOjTDKU_bxmDun-HuHlPXWk8VpMgHjjjR0vWwUyJUqUnmU2hSJEo56Tn5r0l6D0AfweqOfwesDeC06XcAX1_nRhaXFfSmoyXosDJxPaLN20b_ofwIpeJHc</recordid><startdate>20160101</startdate><enddate>20160101</enddate><creator>Mayimele, M A</creator><creator>van Rensburg, J P. 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Such inhomogeneity was explained based on TE with the assumption of Gaussian distribution of barrier heights with a mean barrier height of 0.99eV and a standard deviation of 0.02eV. A mean barrier height of 0.11eV and Richardson constant value of 37Acm−2K−2 were determined from the modified Richardson plot that considers the Gaussian distribution of barrier heights.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2015.07.034</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Barrier inhomogeneities Barriers Condensed matter Diodes Extraction Gaussian distribution & Modified Richardson plot Inhomogeneity Normal distribution Palladium Series resistance Zinc oxide |
| title | Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes |
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