Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder
This study focuses on the effect of V-doping on the ferromagnetism（FM） of 6H-SiC powder.The X-ray diffraction results indicate that V is inserted into the 6H-SiC lattice.The Raman spectra reveal that with a V concentration of 25 ppm,the crystalline quality and carrier concentration of 6H-SiC are har...
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| Veröffentlicht in: | Chinese physics B 2013-02, Vol.22 (2), p.474-476 |
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| creator | 王辉 严成锋 孔海宽 陈建军 忻隽 施尔畏 |
| description | This study focuses on the effect of V-doping on the ferromagnetism（FM） of 6H-SiC powder.The X-ray diffraction results indicate that V is inserted into the 6H-SiC lattice.The Raman spectra reveal that with a V concentration of 25 ppm,the crystalline quality and carrier concentration of 6H-SiC are hardly varied.It is found that after the V-doping process,the saturation magnetization（Ms） and the vacancy concentration of 6H-SiC are both increased.From these results,it is deduced that the effect of V might contribute mainly to the increase of vacancy concentration,thus resulting in the increase of Ms of V-doped 6H-SiC. |
| doi_str_mv | 10.1088/1674-1056/22/2/027505 |
| format | Article |
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vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder</title><source>Institute of Physics Journals</source><creator>王辉 严成锋 孔海宽 陈建军 忻隽 施尔畏</creator><creatorcontrib>王辉 严成锋 孔海宽 陈建军 忻隽 施尔畏</creatorcontrib><description>This study focuses on the effect of V-doping on the ferromagnetism（FM） of 6H-SiC powder.The X-ray diffraction results indicate that V is inserted into the 6H-SiC lattice.The Raman spectra reveal that with a V concentration of 25 ppm,the crystalline quality and carrier concentration of 6H-SiC are hardly varied.It is found that after the V-doping process,the saturation magnetization（Ms） and the vacancy concentration of 6H-SiC are both increased.From these results,it is deduced that the effect of V might contribute mainly to the increase of vacancy concentration,thus resulting in the increase of Ms of V-doped 6H-SiC.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>EISSN: 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vacancies</subject><subject>Lattices</subject><subject>Saturation (magnetic)</subject><subject>SiC粉体</subject><subject>Vacancies</subject><subject>X-rays</subject><subject>X-射线衍射</subject><subject>室温</subject><subject>掺杂工艺</subject><subject>载流子浓度</subject><subject>铁磁性</subject><subject>饱和磁化强度</subject><issn>1674-1056</issn><issn>2058-3834</issn><issn>1741-4199</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNo9kMtKw0AYRgdRsFYfQRh3bmLmkrlkKaVaoSB42w6TyT9tpMmkM6ni29vQ0tW3OedbHIRuKXmgROucSlVklAiZM5aznDAliDhDE0aEzrjmxTmanJhLdJXSNyGSEsYn6G3uPbgBB49_bGfrZtfi0OFhDTiG0OIB2h6iHXYRsIcYQ2tXHQxNakflK6tDDzWWi-y9meE-_NYQr9GFt5sEN8edos-n-cdskS1fn19mj8vMccqGjNVMWKior-qiIrIUSnqnqKoKzgmlXtWaK-tJ6UpZSOqAaqdtCZxJTsCVfIruD799DNsdpMG0TXKw2dgOwi4ZqkrOBCWK7VFxQF0MKUXwpo9Na-OfocSMDc3Yx4x9DGOGmUPDvXd39NahW22bbnUSC0G1UJrwf3zabtE</recordid><startdate>20130201</startdate><enddate>20130201</enddate><creator>王辉 严成锋 孔海宽 陈建军 忻隽 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(magnetic)</topic><topic>SiC粉体</topic><topic>Vacancies</topic><topic>X-rays</topic><topic>X-射线衍射</topic><topic>室温</topic><topic>掺杂工艺</topic><topic>载流子浓度</topic><topic>铁磁性</topic><topic>饱和磁化强度</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>王辉 严成锋 孔海宽 陈建军 忻隽 施尔畏</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>王辉 严成锋 孔海宽 陈建军 忻隽 施尔畏</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder</atitle><jtitle>Chinese physics B</jtitle><addtitle>Chinese Physics</addtitle><date>2013-02-01</date><risdate>2013</risdate><volume>22</volume><issue>2</issue><spage>474</spage><epage>476</epage><pages>474-476</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><eissn>1741-4199</eissn><abstract>This study focuses on the effect of V-doping on the ferromagnetism（FM） of 6H-SiC powder.The X-ray diffraction results indicate that V is inserted into the 6H-SiC lattice.The Raman spectra reveal that with a V concentration of 25 ppm,the crystalline quality and carrier concentration of 6H-SiC are hardly varied.It is found that after the V-doping process,the saturation magnetization（Ms） and the vacancy concentration of 6H-SiC are both increased.From these results,it is deduced that the effect of V might contribute mainly to the 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| ispartof | Chinese physics B, 2013-02, Vol.22 (2), p.474-476 |
| issn | 1674-1056 2058-3834 1741-4199 |
| language | eng |
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| source | Institute of Physics Journals |
| subjects | 6H-SiC Crystal structure Diffraction Ferromagnetism Lattice vacancies Lattices Saturation (magnetic) SiC粉体 Vacancies X-rays X-射线衍射 室温 掺杂工艺 载流子浓度 铁磁性 饱和磁化强度 |
| title | Effect of vanadium on the room temperature ferromagnetism of V-doped 6H-SiC powder |
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