Low-thermal budget flash light annealing for Al sub(2)O sub(3) surface passivation

This value is achieved due to a very low interface trap density of below 10 super(10) eV super(-1) cm super(-2) and a fixed charge density of (2-3) 10 super(12) cm super(-2). In contrast, plasma ALD-grown Al sub(2)O sub(3) layers only reach carrier lifetimes of about 1 ms. This is mainly caused by a...

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Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2015-11, Vol.9 (11), p.631-635
Hauptverfasser:	Simon, Daniel K, Henke, Thomas, Jordan, Paul M, Fengler, Franz PG, Mikolajick, Thomas, Bartha, Johann W, Dirnstorfer, Ingo
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Annealing Budgeting Carrier lifetime Density Deposition Passivation
Online-Zugang:	Volltext
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