Impact of dislocations and defects on the relaxation behavior of InGaN/GaN multiple quantum wells grown on Si and sapphire substrates

We investigated the relaxation behavior of InGaN/GaN blue multiple quantum wells (MQWs) grown on Si (111) and sapphire (0001) substrates to determine how the threading dislocation density (TDD) in the underlying GaN layer, the thickness of the MQWs, and the growth substrate (Si or sapphire) affect t...

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Veröffentlicht in:	Physica Status Solidi. B: Basic Solid State Physics 2015-05, Vol.252 (5), p.917-922
Hauptverfasser:	Yoshida, Hisashi, Hikosaka, Toshiki, Nago, Hajime, Nunoue, Shinya
Format:	Artikel
Sprache:	eng
Schlagworte:	defects Density Dislocations Gallium nitrides GaN Indium gallium nitrides InGaN lattice mismatch multiple quantum wells Quantum wells Sapphire Silicon substrates Threading dislocations
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