Radio frequency transistors based on ultra-high purity semiconducting carbon nanotubes with superior extrinsic maximum oscillation frequency
In this paper, we report polyfluorene-separated ultra-high purity semiconducting carbon nanotube radio frequency transistors with a self-aligned T-shape gate structure. Because of the ultra-high semiconducting tube purity and self-aligned T-shape gate structure, these transistors showed an excellent...
Gespeichert in:
| Veröffentlicht in: | Nano research 2016-02, Vol.9 (2), p.363-371 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 371 |
|---|---|
| container_issue | 2 |
| container_start_page | 363 |
| container_title | Nano research |
| container_volume | 9 |
| creator | Cao, Yu Che, Yuchi Gui, Hui Cao, Xuan Zhou, Chongwu |
| description | In this paper, we report polyfluorene-separated ultra-high purity semiconducting carbon nanotube radio frequency transistors with a self-aligned T-shape gate structure. Because of the ultra-high semiconducting tube purity and self-aligned T-shape gate structure, these transistors showed an excellent direct current and radio frequency performance. In regard to the direct current characteristics, these transistors showed a transconductance up to 40μS/μm and an excellent current saturation behavior with an output resistance greater than 200 kΩ·μm. In terms of the radio frequency characteristics, an extrinsic maximum oscillation frequency （fmax） of 19 GHz was achieved, which is a record among all kinds of carbon nanotube transistors, and an extrinsic current gain cut-off frequency （fT） of 22 GHz was achieved, which is the highest among transistors based on carbon nanotube networks. Our results take the radio frequency performance of carbon nanotube transistors to a new level and can further accelerate the application of carbon nanotubes for future radio frequency electronics. |
| doi_str_mv | 10.1007/s12274-015-0915-7 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1793242789</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>668213947</cqvip_id><sourcerecordid>2001474120</sourcerecordid><originalsourceid>FETCH-LOGICAL-c446t-e16a4d6e949aa41aae612bee736fd17852f21cf12f4d6bfe703b8f4db49a24a13</originalsourceid><addsrcrecordid>eNp9kU9r3DAQxU1poWmSD5CbaC-9uNXIimUfS-g_CBRKehayPN5VWEsbjUSz36EfuhM2TaGH6iAN4vfeG3hNcwHyHUhp3hMoZXQr4bKVI1_mWXMC4zi0ks_zPzMo_bJ5RXQrZa9ADyfNr-9uDkksGe8qRn8QJbtIgUrKJCZHOIsURd3xd7sNm63Y1xzKQRCuwac4V19C3Ajv8sRcdDGVOiGJn6FsBdU95pCywPuSA9t6sbr7sNZVJPJht3MlsOop_Kx5sbgd4fnje9r8-PTx5upLe_3t89erD9et17ovLULv9NzjqEfnNDiHPagJ0XT9MoMZLtWiwC-gFqamBY3spoHniXmlHXSnzduj7z4nTqZi10AeeZ-IqZIFM3ZKKzOMjL75B71NNUfeziopQRsNSjIFR8rnRJRxsfscVpcPFqR96Mce-7Hcj33oxxrWqKOGmI0bzH-d_yd6_Ri0TXFzx7qnpL4fFHSjNt1vAuSi2w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2001474120</pqid></control><display><type>article</type><title>Radio frequency transistors based on ultra-high purity semiconducting carbon nanotubes with superior extrinsic maximum oscillation frequency</title><source>Springer Nature - Complete Springer Journals</source><creator>Cao, Yu ; Che, Yuchi ; Gui, Hui ; Cao, Xuan ; Zhou, Chongwu</creator><creatorcontrib>Cao, Yu ; Che, Yuchi ; Gui, Hui ; Cao, Xuan ; Zhou, Chongwu</creatorcontrib><description>In this paper, we report polyfluorene-separated ultra-high purity semiconducting carbon nanotube radio frequency transistors with a self-aligned T-shape gate structure. Because of the ultra-high semiconducting tube purity and self-aligned T-shape gate structure, these transistors showed an excellent direct current and radio frequency performance. In regard to the direct current characteristics, these transistors showed a transconductance up to 40μS/μm and an excellent current saturation behavior with an output resistance greater than 200 kΩ·μm. In terms of the radio frequency characteristics, an extrinsic maximum oscillation frequency （fmax） of 19 GHz was achieved, which is a record among all kinds of carbon nanotube transistors, and an extrinsic current gain cut-off frequency （fT） of 22 GHz was achieved, which is the highest among transistors based on carbon nanotube networks. Our results take the radio frequency performance of carbon nanotube transistors to a new level and can further accelerate the application of carbon nanotubes for future radio frequency electronics.</description><identifier>ISSN: 1998-0124</identifier><identifier>EISSN: 1998-0000</identifier><identifier>DOI: 10.1007/s12274-015-0915-7</identifier><language>eng</language><publisher>Beijing: Tsinghua University Press</publisher><subject>Atomic/Molecular Structure and Spectra ; Biomedicine ; Biotechnology ; Carbon ; Carbon nanotubes ; Chemistry and Materials Science ; Condensed Matter Physics ; Direct current ; Gates ; Materials Science ; Nanostructure ; Nanotechnology ; Nanotubes ; Purity ; Radio frequencies ; Radio frequency ; Research Article ; Self alignment ; Semiconductor devices ; Transconductance ; Transistors ; 半导体碳纳米管 ; 射频性能 ; 射频晶体管 ; 无线电频率 ; 直流特性 ; 碳纳米管晶体管 ; 纳米碳管 ; 超高纯度</subject><ispartof>Nano research, 2016-02, Vol.9 (2), p.363-371</ispartof><rights>Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2015</rights><rights>Nano Research is a copyright of Springer, (2015). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c446t-e16a4d6e949aa41aae612bee736fd17852f21cf12f4d6bfe703b8f4db49a24a13</citedby><cites>FETCH-LOGICAL-c446t-e16a4d6e949aa41aae612bee736fd17852f21cf12f4d6bfe703b8f4db49a24a13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/71233X/71233X.jpg</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12274-015-0915-7$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12274-015-0915-7$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Cao, Yu</creatorcontrib><creatorcontrib>Che, Yuchi</creatorcontrib><creatorcontrib>Gui, Hui</creatorcontrib><creatorcontrib>Cao, Xuan</creatorcontrib><creatorcontrib>Zhou, Chongwu</creatorcontrib><title>Radio frequency transistors based on ultra-high purity semiconducting carbon nanotubes with superior extrinsic maximum oscillation frequency</title><title>Nano research</title><addtitle>Nano Res</addtitle><addtitle>Nano Research</addtitle><description>In this paper, we report polyfluorene-separated ultra-high purity semiconducting carbon nanotube radio frequency transistors with a self-aligned T-shape gate structure. Because of the ultra-high semiconducting tube purity and self-aligned T-shape gate structure, these transistors showed an excellent direct current and radio frequency performance. In regard to the direct current characteristics, these transistors showed a transconductance up to 40μS/μm and an excellent current saturation behavior with an output resistance greater than 200 kΩ·μm. In terms of the radio frequency characteristics, an extrinsic maximum oscillation frequency （fmax） of 19 GHz was achieved, which is a record among all kinds of carbon nanotube transistors, and an extrinsic current gain cut-off frequency （fT） of 22 GHz was achieved, which is the highest among transistors based on carbon nanotube networks. Our results take the radio frequency performance of carbon nanotube transistors to a new level and can further accelerate the application of carbon nanotubes for future radio frequency electronics.</description><subject>Atomic/Molecular Structure and Spectra</subject><subject>Biomedicine</subject><subject>Biotechnology</subject><subject>Carbon</subject><subject>Carbon nanotubes</subject><subject>Chemistry and Materials Science</subject><subject>Condensed Matter Physics</subject><subject>Direct current</subject><subject>Gates</subject><subject>Materials Science</subject><subject>Nanostructure</subject><subject>Nanotechnology</subject><subject>Nanotubes</subject><subject>Purity</subject><subject>Radio frequencies</subject><subject>Radio frequency</subject><subject>Research Article</subject><subject>Self alignment</subject><subject>Semiconductor devices</subject><subject>Transconductance</subject><subject>Transistors</subject><subject>半导体碳纳米管</subject><subject>射频性能</subject><subject>射频晶体管</subject><subject>无线电频率</subject><subject>直流特性</subject><subject>碳纳米管晶体管</subject><subject>纳米碳管</subject><subject>超高纯度</subject><issn>1998-0124</issn><issn>1998-0000</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kU9r3DAQxU1poWmSD5CbaC-9uNXIimUfS-g_CBRKehayPN5VWEsbjUSz36EfuhM2TaGH6iAN4vfeG3hNcwHyHUhp3hMoZXQr4bKVI1_mWXMC4zi0ks_zPzMo_bJ5RXQrZa9ADyfNr-9uDkksGe8qRn8QJbtIgUrKJCZHOIsURd3xd7sNm63Y1xzKQRCuwac4V19C3Ajv8sRcdDGVOiGJn6FsBdU95pCywPuSA9t6sbr7sNZVJPJht3MlsOop_Kx5sbgd4fnje9r8-PTx5upLe_3t89erD9et17ovLULv9NzjqEfnNDiHPagJ0XT9MoMZLtWiwC-gFqamBY3spoHniXmlHXSnzduj7z4nTqZi10AeeZ-IqZIFM3ZKKzOMjL75B71NNUfeziopQRsNSjIFR8rnRJRxsfscVpcPFqR96Mce-7Hcj33oxxrWqKOGmI0bzH-d_yd6_Ri0TXFzx7qnpL4fFHSjNt1vAuSi2w</recordid><startdate>20160201</startdate><enddate>20160201</enddate><creator>Cao, Yu</creator><creator>Che, Yuchi</creator><creator>Gui, Hui</creator><creator>Cao, Xuan</creator><creator>Zhou, Chongwu</creator><general>Tsinghua University Press</general><general>Springer Nature B.V</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7QF</scope><scope>7QO</scope><scope>7QQ</scope><scope>7SE</scope><scope>7SR</scope><scope>7U5</scope><scope>7X7</scope><scope>7XB</scope><scope>8AO</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FH</scope><scope>8FI</scope><scope>8FJ</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AEUYN</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>FR3</scope><scope>FYUFA</scope><scope>GHDGH</scope><scope>GNUQQ</scope><scope>H8G</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>K9.</scope><scope>KB.</scope><scope>L7M</scope><scope>LK8</scope><scope>M0S</scope><scope>M7P</scope><scope>P64</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope></search><sort><creationdate>20160201</creationdate><title>Radio frequency transistors based on ultra-high purity semiconducting carbon nanotubes with superior extrinsic maximum oscillation frequency</title><author>Cao, Yu ; Che, Yuchi ; Gui, Hui ; Cao, Xuan ; Zhou, Chongwu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c446t-e16a4d6e949aa41aae612bee736fd17852f21cf12f4d6bfe703b8f4db49a24a13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Atomic/Molecular Structure and Spectra</topic><topic>Biomedicine</topic><topic>Biotechnology</topic><topic>Carbon</topic><topic>Carbon nanotubes</topic><topic>Chemistry and Materials Science</topic><topic>Condensed Matter Physics</topic><topic>Direct current</topic><topic>Gates</topic><topic>Materials Science</topic><topic>Nanostructure</topic><topic>Nanotechnology</topic><topic>Nanotubes</topic><topic>Purity</topic><topic>Radio frequencies</topic><topic>Radio frequency</topic><topic>Research Article</topic><topic>Self alignment</topic><topic>Semiconductor devices</topic><topic>Transconductance</topic><topic>Transistors</topic><topic>半导体碳纳米管</topic><topic>射频性能</topic><topic>射频晶体管</topic><topic>无线电频率</topic><topic>直流特性</topic><topic>碳纳米管晶体管</topic><topic>纳米碳管</topic><topic>超高纯度</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cao, Yu</creatorcontrib><creatorcontrib>Che, Yuchi</creatorcontrib><creatorcontrib>Gui, Hui</creatorcontrib><creatorcontrib>Cao, Xuan</creatorcontrib><creatorcontrib>Zhou, Chongwu</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Aluminium Industry Abstracts</collection><collection>Biotechnology Research Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Health & Medical Collection</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>ProQuest Pharma Collection</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Hospital Premium Collection</collection><collection>Hospital Premium Collection (Alumni Edition)</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest One Sustainability</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>Biological Science Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>Natural Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>Engineering Research Database</collection><collection>Health Research Premium Collection</collection><collection>Health Research Premium Collection (Alumni)</collection><collection>ProQuest Central Student</collection><collection>Copper Technical Reference Library</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>ProQuest Health & Medical Complete (Alumni)</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest Biological Science Collection</collection><collection>Health & Medical Collection (Alumni Edition)</collection><collection>Biological Science Database</collection><collection>Biotechnology and BioEngineering Abstracts</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>Nano research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cao, Yu</au><au>Che, Yuchi</au><au>Gui, Hui</au><au>Cao, Xuan</au><au>Zhou, Chongwu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Radio frequency transistors based on ultra-high purity semiconducting carbon nanotubes with superior extrinsic maximum oscillation frequency</atitle><jtitle>Nano research</jtitle><stitle>Nano Res</stitle><addtitle>Nano Research</addtitle><date>2016-02-01</date><risdate>2016</risdate><volume>9</volume><issue>2</issue><spage>363</spage><epage>371</epage><pages>363-371</pages><issn>1998-0124</issn><eissn>1998-0000</eissn><abstract>In this paper, we report polyfluorene-separated ultra-high purity semiconducting carbon nanotube radio frequency transistors with a self-aligned T-shape gate structure. Because of the ultra-high semiconducting tube purity and self-aligned T-shape gate structure, these transistors showed an excellent direct current and radio frequency performance. In regard to the direct current characteristics, these transistors showed a transconductance up to 40μS/μm and an excellent current saturation behavior with an output resistance greater than 200 kΩ·μm. In terms of the radio frequency characteristics, an extrinsic maximum oscillation frequency （fmax） of 19 GHz was achieved, which is a record among all kinds of carbon nanotube transistors, and an extrinsic current gain cut-off frequency （fT） of 22 GHz was achieved, which is the highest among transistors based on carbon nanotube networks. Our results take the radio frequency performance of carbon nanotube transistors to a new level and can further accelerate the application of carbon nanotubes for future radio frequency electronics.</abstract><cop>Beijing</cop><pub>Tsinghua University Press</pub><doi>10.1007/s12274-015-0915-7</doi><tpages>9</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1998-0124 |
| ispartof | Nano research, 2016-02, Vol.9 (2), p.363-371 |
| issn | 1998-0124 1998-0000 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1793242789 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Atomic/Molecular Structure and Spectra Biomedicine Biotechnology Carbon Carbon nanotubes Chemistry and Materials Science Condensed Matter Physics Direct current Gates Materials Science Nanostructure Nanotechnology Nanotubes Purity Radio frequencies Radio frequency Research Article Self alignment Semiconductor devices Transconductance Transistors 半导体碳纳米管 射频性能 射频晶体管 无线电频率 直流特性 碳纳米管晶体管 纳米碳管 超高纯度 |
| title | Radio frequency transistors based on ultra-high purity semiconducting carbon nanotubes with superior extrinsic maximum oscillation frequency |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T09%3A47%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Radio%20frequency%20transistors%20based%20on%20ultra-high%20purity%20semiconducting%20carbon%20nanotubes%20with%20superior%20extrinsic%20maximum%20oscillation%20frequency&rft.jtitle=Nano%20research&rft.au=Cao,%20Yu&rft.date=2016-02-01&rft.volume=9&rft.issue=2&rft.spage=363&rft.epage=371&rft.pages=363-371&rft.issn=1998-0124&rft.eissn=1998-0000&rft_id=info:doi/10.1007/s12274-015-0915-7&rft_dat=%3Cproquest_cross%3E2001474120%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2001474120&rft_id=info:pmid/&rft_cqvip_id=668213947&rfr_iscdi=true |