High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method

This article gives the results of crystal growth by a High-Temperature Gas Source Method such as HTCVD. It was reported that clusters were formed and were an important factor of the growth in HTCVDs, and some influences of them were investigated. The difference between the model with and without clu...

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Veröffentlicht in:	Materials science forum 2015-06, Vol.821-823, p.104-107
Hauptverfasser:	Kojima, Jun, Makino, Emi, Tokuda, Yuichiro, Sugiyama, Naohiro, Hoshino, Norihiro, Tsuchida, Hidekazu
Format:	Artikel
Sprache:	eng
Schlagworte:	Clusters Crystal growth Gas flow High speed Ingots Materials science Mathematical models Silicon carbide
Online-Zugang:	Volltext
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