High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method
This article gives the results of crystal growth by a High-Temperature Gas Source Method such as HTCVD. It was reported that clusters were formed and were an important factor of the growth in HTCVDs, and some influences of them were investigated. The difference between the model with and without clu...
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| Veröffentlicht in: | Materials science forum 2015-06, Vol.821-823, p.104-107 |
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| creator | Kojima, Jun Makino, Emi Tokuda, Yuichiro Sugiyama, Naohiro Hoshino, Norihiro Tsuchida, Hidekazu |
| description | This article gives the results of crystal growth by a High-Temperature Gas Source Method such as HTCVD. It was reported that clusters were formed and were an important factor of the growth in HTCVDs, and some influences of them were investigated. The difference between the model with and without clustering was compared. The experimental growth rates corresponded to the cluster model, and this indicated that clusters affect the crystal growth. Relations between the experimental growth rate and the growth temperature as a function of gas flow ratio were investigated. The gas flow ratio was defined: (SiH4+C3H8) / (SiH4+C3H8+H2). Maximum growth rate was 2.3mm/h under high source gas ratio. At present, a Φ75mm×54mm sized ingot has been developed. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.821-823.104 |
| format | Article |
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It was reported that clusters were formed and were an important factor of the growth in HTCVDs, and some influences of them were investigated. The difference between the model with and without clustering was compared. The experimental growth rates corresponded to the cluster model, and this indicated that clusters affect the crystal growth. Relations between the experimental growth rate and the growth temperature as a function of gas flow ratio were investigated. The gas flow ratio was defined: (SiH4+C3H8) / (SiH4+C3H8+H2). Maximum growth rate was 2.3mm/h under high source gas ratio. 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| subjects | Clusters Crystal growth Gas flow High speed Ingots Materials science Mathematical models Silicon carbide |
| title | High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method |
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