Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas（2DEG） performance are investigated. Lowering the V/III ratio and enhancing the reacto...

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Veröffentlicht in:	Chinese physics B 2015-09, Vol.24 (9), p.399-402
1. Verfasser:	何晓光赵德刚江德生朱建军陈平刘宗顺乐伶聪杨静李晓静张书明杨辉
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Sprache:	eng
Schlagworte:	AlGaN Aluminum gallium nitrides Aluminum nitride Coalescence Coalescing Density Electron gas Gallium nitrides Nuclei 优化流动生长条件电子迁移率粗糙界面散射结构聚结
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container_title	Chinese physics B
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creator	何晓光赵德刚江德生朱建军陈平刘宗顺乐伶聪杨静李晓静张书明杨辉
description	AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas（2DEG） performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the hightemperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 × 10^13cm^-2, electron mobility of 2101 cm^2·V^-1·s^-1, and square resistance of 249 Ω is obtained.
doi_str_mv	10.1088/1674-1056/24/9/096802
format	Article
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Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas（2DEG） performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the hightemperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 × 10^13cm^-2, electron mobility of 2101 cm^2·V^-1·s^-1, and square resistance of 249 Ω is obtained.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>EISSN: 1741-4199</identifier><identifier>DOI: 10.1088/1674-1056/24/9/096802</identifier><language>eng</language><subject>AlGaN ; Aluminum gallium nitrides ; Aluminum nitride ; Coalescence ; Coalescing ; Density ; Electron gas ; Gallium nitrides ; Nuclei ; 优化 ; 流动 ; 生长条件 ; 电子迁移率 ; 粗糙界面散射 ; 结构 ; 聚结</subject><ispartof>Chinese physics B, 2015-09, Vol.24 (9), p.399-402</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c261t-37f05d86876050dcf8aceeca693f9aaccb6a6d1b29940d907c5e62c654e65a933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>何晓光赵德刚江德生朱建军陈平刘宗顺乐伶聪杨静李晓静张书明杨辉</creatorcontrib><title>Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure</title><title>Chinese physics B</title><addtitle>Chinese Physics</addtitle><description>AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas（2DEG） performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the hightemperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 × 10^13cm^-2, electron mobility of 2101 cm^2·V^-1·s^-1, and square resistance of 249 Ω is obtained.</description><subject>AlGaN</subject><subject>Aluminum gallium nitrides</subject><subject>Aluminum nitride</subject><subject>Coalescence</subject><subject>Coalescing</subject><subject>Density</subject><subject>Electron gas</subject><subject>Gallium nitrides</subject><subject>Nuclei</subject><subject>优化</subject><subject>流动</subject><subject>生长条件</subject><subject>电子迁移率</subject><subject>粗糙界面散射</subject><subject>结构</subject><subject>聚结</subject><issn>1674-1056</issn><issn>2058-3834</issn><issn>1741-4199</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo9kMtq3DAUhkVJIJPLIwREVtm41sWSpeUQ2kkhpJt2LTSyPFaRpYkkU9IXyGtH7oSsDufw_T-HD4BbjL5iJESLed81GDHekq6VLZJcIPIFbAhioqGCdmdg88lcgMuc_yDEMSJ0A952Kf4tEzQxDK64GGA8Fje7f_r_osMA57h33pVXaMOkg7GzDQWWKcXlMMFjij6GgwuHerJwp59hWIy3rjZqb7OxNbFSxuYM4wi3vjLt1j-3K5tLWkxZkr0G56P22d58zCvw-_u3Xw-PzdPP3Y-H7VNjCMelof2I2CC46DliaDCj0MZao7mko9TamD3XfMB7ImWHBol6wywnhrPOcqYlpVfg_tRbX3pZbC5qdvVJ73WwcckK95IS0uMOVZSdUJNizsmO6pjcrNOrwkit4tUqVa1SFemUVCfxNXf3kZuqmZeq5jPIORO8Z6yj7481hK8</recordid><startdate>20150901</startdate><enddate>20150901</enddate><creator>何晓光赵德刚江德生朱建军陈平刘宗顺乐伶聪杨静李晓静张书明杨辉</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20150901</creationdate><title>Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure</title><author>何晓光赵德刚江德生朱建军陈平刘宗顺乐伶聪杨静李晓静张书明杨辉</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c261t-37f05d86876050dcf8aceeca693f9aaccb6a6d1b29940d907c5e62c654e65a933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>AlGaN</topic><topic>Aluminum gallium nitrides</topic><topic>Aluminum nitride</topic><topic>Coalescence</topic><topic>Coalescing</topic><topic>Density</topic><topic>Electron gas</topic><topic>Gallium nitrides</topic><topic>Nuclei</topic><topic>优化</topic><topic>流动</topic><topic>生长条件</topic><topic>电子迁移率</topic><topic>粗糙界面散射</topic><topic>结构</topic><topic>聚结</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>何晓光赵德刚江德生朱建军陈平刘宗顺乐伶聪杨静李晓静张书明杨辉</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>何晓光赵德刚江德生朱建军陈平刘宗顺乐伶聪杨静李晓静张书明杨辉</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure</atitle><jtitle>Chinese physics B</jtitle><addtitle>Chinese Physics</addtitle><date>2015-09-01</date><risdate>2015</risdate><volume>24</volume><issue>9</issue><spage>399</spage><epage>402</epage><pages>399-402</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><eissn>1741-4199</eissn><abstract>AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas（2DEG） performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the hightemperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 × 10^13cm^-2, electron mobility of 2101 cm^2·V^-1·s^-1, and square resistance of 249 Ω is obtained.</abstract><doi>10.1088/1674-1056/24/9/096802</doi><tpages>4</tpages></addata></record>
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subjects	AlGaN Aluminum gallium nitrides Aluminum nitride Coalescence Coalescing Density Electron gas Gallium nitrides Nuclei 优化流动生长条件电子迁移率粗糙界面散射结构聚结
title	Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure
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