Structural and optical properties of the a-Si:H thin films irradiated by high energetic electron beams

Hydrogenated amorphous silicon (a-Si:H) films deposited on quartz substrate by radio-frequency plasma enhanced chemical vapour deposition were irradiated by an high energetic electron beam source from an electronic gun device. The effects of the high energetic electron beam current density (0.32–0.8...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2016-02, Vol.27 (2), p.1485-1492
Hauptverfasser:	Liu, Weiying, Jiang, Xiangdong, Li, Wei, Wang, Jimin, Lian, Xueyan, Zeng, Yixiong, Wu, Haifeng, Zhang, Xiting
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic force microscopy Characterization and Evaluation of Materials Chemistry and Materials Science Crystallinity Disorders Electron beams Irradiation Materials Science Optical and Electronic Materials Thin films Ultraviolet spectroscopy X-ray diffraction
Online-Zugang:	Volltext
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