Infrared study of defects in nitrogen-doped electron irradiated silicon

Nitrogen is a key dopant in Czochralski silicon widely used to control properties of Si wafers for applications in the microelectronics industry. Most of these properties are affected by defects and their processes. Here we employ Fourier transform infrared spectroscopy to investigate the existence...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2016-02, Vol.27 (2), p.2054-2061
Hauptverfasser:	Sgourou, E. N., Angeletos, T., Chroneos, A., Londos, C. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bands Characterization and Evaluation of Materials Chemistry and Materials Science Correlation Defects Doping Interstitials Irradiation Materials Science Nitrous oxides Optical and Electronic Materials Silicon
Online-Zugang:	Volltext
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