High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct...

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Veröffentlicht in:Review of scientific instruments 2016-04, Vol.87 (4), p.044702-044702
Hauptverfasser: Giusi, G., Giordano, O., Scandurra, G., Rapisarda, M., Calvi, S., Ciofi, C.
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Sprache:eng
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