High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Review of scientific instruments 2016-04, Vol.87 (4), p.044702-044702
Hauptverfasser: Giusi, G., Giordano, O., Scandurra, G., Rapisarda, M., Calvi, S., Ciofi, C.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 044702
container_issue 4
container_start_page 044702
container_title Review of scientific instruments
container_volume 87
creator Giusi, G.
Giordano, O.
Scandurra, G.
Rapisarda, M.
Calvi, S.
Ciofi, C.
description Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz1/2, while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.
doi_str_mv 10.1063/1.4945263
format Article
fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_proquest_miscellaneous_1786522380</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1786522380</sourcerecordid><originalsourceid>FETCH-LOGICAL-c477t-11e58bd6c763ee1611f02ff5e9fdd777b94e36000a5bb68fdc234cbb371557413</originalsourceid><addsrcrecordid>eNp9kU1vFCEcxidGY9fqwS9gSLyo6VReBpg5mkatSRMveiYM_NmlmYEVmG3WT-NHlXXX9qRcOPDLw_PSNC8JviRYsPfkshs6TgV71KwI7odWCsoeNyuMWdcK2fVnzbOcb3E9nJCnzRmVhBEx4FXz69qvNyhDyL74nS97NIPOS4IZQkF5nwvMyMWEygaQ9QlMac2SUn29QEZvtfFFBwPtLk5Fr-EC6WDRWhdobdI-oCneIZfgxwLB7FGIPgMyG520KZD8T118DCg65DxMFoFz9QdUkq6GcokpP2-eOD1leHG6z5vvnz5-u7pub75-_nL14aY1nZSlJQR4P1phpGAARBDiMHWOw-CslVKOQwdM1AI0H0fRO2so68w4Mkk4lx1h583ro27MxatcY4HZmBhC9aMo5UOtTFTqzZHaplgj5aJmnw1Mkw4Ql6yI7AWnlPX4QfAevY1LCjWDooQeQMZppd4eKZNizgmc2iY_67RXBKvDuIqo07iVfXVSXMYZ7D35d80KvDsCB_t_mv2v2j_hXUwPoNpax34D0uu9QQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2121786352</pqid></control><display><type>article</type><title>High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Giusi, G. ; Giordano, O. ; Scandurra, G. ; Rapisarda, M. ; Calvi, S. ; Ciofi, C.</creator><creatorcontrib>Giusi, G. ; Giordano, O. ; Scandurra, G. ; Rapisarda, M. ; Calvi, S. ; Ciofi, C.</creatorcontrib><description>Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz1/2, while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.</description><identifier>ISSN: 0034-6748</identifier><identifier>EISSN: 1089-7623</identifier><identifier>DOI: 10.1063/1.4945263</identifier><identifier>PMID: 27131690</identifier><identifier>CODEN: RSINAK</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>Bias ; CAPACITANCE ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DIRECT CURRENT ; ELECTRIC POTENTIAL ; Electrical properties ; ELECTRONS ; FIELD EFFECT TRANSISTORS ; FLUCTUATIONS ; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ; LF noise ; Material properties ; NOISE ; Noise sensitivity ; Scientific apparatus &amp; instruments ; Semiconductor devices ; SENSITIVITY ; STRESSES ; Thin film transistors ; THIN FILMS ; TOPOLOGY ; Transistors ; Variation</subject><ispartof>Review of scientific instruments, 2016-04, Vol.87 (4), p.044702-044702</ispartof><rights>AIP Publishing LLC</rights><rights>2016 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c477t-11e58bd6c763ee1611f02ff5e9fdd777b94e36000a5bb68fdc234cbb371557413</citedby><cites>FETCH-LOGICAL-c477t-11e58bd6c763ee1611f02ff5e9fdd777b94e36000a5bb68fdc234cbb371557413</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/rsi/article-lookup/doi/10.1063/1.4945263$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,4511,27923,27924,76255</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/27131690$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/22597136$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Giusi, G.</creatorcontrib><creatorcontrib>Giordano, O.</creatorcontrib><creatorcontrib>Scandurra, G.</creatorcontrib><creatorcontrib>Rapisarda, M.</creatorcontrib><creatorcontrib>Calvi, S.</creatorcontrib><creatorcontrib>Ciofi, C.</creatorcontrib><title>High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors</title><title>Review of scientific instruments</title><addtitle>Rev Sci Instrum</addtitle><description>Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz1/2, while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.</description><subject>Bias</subject><subject>CAPACITANCE</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DIRECT CURRENT</subject><subject>ELECTRIC POTENTIAL</subject><subject>Electrical properties</subject><subject>ELECTRONS</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>FLUCTUATIONS</subject><subject>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</subject><subject>LF noise</subject><subject>Material properties</subject><subject>NOISE</subject><subject>Noise sensitivity</subject><subject>Scientific apparatus &amp; instruments</subject><subject>Semiconductor devices</subject><subject>SENSITIVITY</subject><subject>STRESSES</subject><subject>Thin film transistors</subject><subject>THIN FILMS</subject><subject>TOPOLOGY</subject><subject>Transistors</subject><subject>Variation</subject><issn>0034-6748</issn><issn>1089-7623</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kU1vFCEcxidGY9fqwS9gSLyo6VReBpg5mkatSRMveiYM_NmlmYEVmG3WT-NHlXXX9qRcOPDLw_PSNC8JviRYsPfkshs6TgV71KwI7odWCsoeNyuMWdcK2fVnzbOcb3E9nJCnzRmVhBEx4FXz69qvNyhDyL74nS97NIPOS4IZQkF5nwvMyMWEygaQ9QlMac2SUn29QEZvtfFFBwPtLk5Fr-EC6WDRWhdobdI-oCneIZfgxwLB7FGIPgMyG520KZD8T118DCg65DxMFoFz9QdUkq6GcokpP2-eOD1leHG6z5vvnz5-u7pub75-_nL14aY1nZSlJQR4P1phpGAARBDiMHWOw-CslVKOQwdM1AI0H0fRO2so68w4Mkk4lx1h583ro27MxatcY4HZmBhC9aMo5UOtTFTqzZHaplgj5aJmnw1Mkw4Ql6yI7AWnlPX4QfAevY1LCjWDooQeQMZppd4eKZNizgmc2iY_67RXBKvDuIqo07iVfXVSXMYZ7D35d80KvDsCB_t_mv2v2j_hXUwPoNpax34D0uu9QQ</recordid><startdate>20160401</startdate><enddate>20160401</enddate><creator>Giusi, G.</creator><creator>Giordano, O.</creator><creator>Scandurra, G.</creator><creator>Rapisarda, M.</creator><creator>Calvi, S.</creator><creator>Ciofi, C.</creator><general>American Institute of Physics</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7X8</scope><scope>OTOTI</scope></search><sort><creationdate>20160401</creationdate><title>High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors</title><author>Giusi, G. ; Giordano, O. ; Scandurra, G. ; Rapisarda, M. ; Calvi, S. ; Ciofi, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c477t-11e58bd6c763ee1611f02ff5e9fdd777b94e36000a5bb68fdc234cbb371557413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Bias</topic><topic>CAPACITANCE</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DIRECT CURRENT</topic><topic>ELECTRIC POTENTIAL</topic><topic>Electrical properties</topic><topic>ELECTRONS</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>FLUCTUATIONS</topic><topic>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</topic><topic>LF noise</topic><topic>Material properties</topic><topic>NOISE</topic><topic>Noise sensitivity</topic><topic>Scientific apparatus &amp; instruments</topic><topic>Semiconductor devices</topic><topic>SENSITIVITY</topic><topic>STRESSES</topic><topic>Thin film transistors</topic><topic>THIN FILMS</topic><topic>TOPOLOGY</topic><topic>Transistors</topic><topic>Variation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Giusi, G.</creatorcontrib><creatorcontrib>Giordano, O.</creatorcontrib><creatorcontrib>Scandurra, G.</creatorcontrib><creatorcontrib>Rapisarda, M.</creatorcontrib><creatorcontrib>Calvi, S.</creatorcontrib><creatorcontrib>Ciofi, C.</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><collection>OSTI.GOV</collection><jtitle>Review of scientific instruments</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Giusi, G.</au><au>Giordano, O.</au><au>Scandurra, G.</au><au>Rapisarda, M.</au><au>Calvi, S.</au><au>Ciofi, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors</atitle><jtitle>Review of scientific instruments</jtitle><addtitle>Rev Sci Instrum</addtitle><date>2016-04-01</date><risdate>2016</risdate><volume>87</volume><issue>4</issue><spage>044702</spage><epage>044702</epage><pages>044702-044702</pages><issn>0034-6748</issn><eissn>1089-7623</eissn><coden>RSINAK</coden><abstract>Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz1/2, while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><pmid>27131690</pmid><doi>10.1063/1.4945263</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0034-6748
ispartof Review of scientific instruments, 2016-04, Vol.87 (4), p.044702-044702
issn 0034-6748
1089-7623
language eng
recordid cdi_proquest_miscellaneous_1786522380
source AIP Journals Complete; Alma/SFX Local Collection
subjects Bias
CAPACITANCE
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIRECT CURRENT
ELECTRIC POTENTIAL
Electrical properties
ELECTRONS
FIELD EFFECT TRANSISTORS
FLUCTUATIONS
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
LF noise
Material properties
NOISE
Noise sensitivity
Scientific apparatus & instruments
Semiconductor devices
SENSITIVITY
STRESSES
Thin film transistors
THIN FILMS
TOPOLOGY
Transistors
Variation
title High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T01%3A06%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20sensitivity%20measurement%20system%20for%20the%20direct-current,%20capacitance-voltage,%20and%20gate-drain%20low%20frequency%20noise%20characterization%20of%20field%20effect%20transistors&rft.jtitle=Review%20of%20scientific%20instruments&rft.au=Giusi,%20G.&rft.date=2016-04-01&rft.volume=87&rft.issue=4&rft.spage=044702&rft.epage=044702&rft.pages=044702-044702&rft.issn=0034-6748&rft.eissn=1089-7623&rft.coden=RSINAK&rft_id=info:doi/10.1063/1.4945263&rft_dat=%3Cproquest_pubme%3E1786522380%3C/proquest_pubme%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2121786352&rft_id=info:pmid/27131690&rfr_iscdi=true