Relativistic Néel-order fields induced by electrical current in antiferromagnets
We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered...
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| Veröffentlicht in: | Physical review letters 2014-10, Vol.113 (15), p.157201-157201 |
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| container_title | Physical review letters |
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| creator | Železný, J Gao, H Výborný, K Zemen, J Mašek, J Manchon, Aurélien Wunderlich, J Sinova, Jairo Jungwirth, T |
| description | We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intraband and to the intrinsic interband spin-orbit fields previously reported in ferromagnets with a broken inversion-symmetry crystal. To illustrate their rich physics and utility, we consider bulk Mn(2)Au with the two spin sublattices forming inversion partners, and a 2D square-lattice antiferromagnet with broken structural inversion symmetry modeled by a Rashba spin-orbit coupling. We propose an antiferromagnetic memory device with electrical writing and reading. |
| doi_str_mv | 10.1103/PhysRevLett.113.157201 |
| format | Article |
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| ispartof | Physical review letters, 2014-10, Vol.113 (15), p.157201-157201 |
| issn | 0031-9007 1079-7114 |
| language | eng |
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| source | American Physical Society Journals |
| subjects | Antiferromagnetism Crystals Data storage Ferromagnetism Inversions Memory devices Transport theory Utilities |
| title | Relativistic Néel-order fields induced by electrical current in antiferromagnets |
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