Effect of de-trapping on carrier transport process in semi-insulating CdZnTe

The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The resu...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Chinese physics B 2015-06, Vol.24 (6), p.511-515
1. Verfasser:	郭榕榕介万奇查钢强徐亚东冯涛王涛杜卓同
Format:	Artikel
Sprache:	eng
Schlagworte:	Cadmium zinc tellurides Carrier transport CdZnTe Electric potential Electron mobility Mathematical analysis Trapping Voltage Waveforms 传输过程俘获半绝缘电场增强电子迁移率瞬态电流载流子
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	515
container_issue	6
container_start_page	511
container_title	Chinese physics B
container_volume	24
creator	郭榕榕介万奇查钢强徐亚东冯涛王涛杜卓同
description	The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V-s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.
doi_str_mv	10.1088/1674-1056/24/6/067203
format	Article
fullrecord	<record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1786208901</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>664946918</cqvip_id><sourcerecordid>1786208901</sourcerecordid><originalsourceid>FETCH-LOGICAL-c313t-cf96411461cf711db291b80422d4267895e2ac5f69fbf58acec3ad9eef151c553</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWKs_QQievKybydcmRym1CgUv9eIlpNmkrmyz22R78N-7S0tPA8Pzvsw8CD0CeQGiVAmy4gUQIUvKS1kSWVHCrtCMEqEKphi_RrMLc4vucv4lRAKhbIbWyxC8G3AXcO2LIdm-b-IOdxE7m1LjEx53MfddGnCfOudzxk3E2e-boon52Nph4hf1d9z4e3QTbJv9w3nO0dfbcrN4L9afq4_F67pwDNhQuKAlB-ASXKgA6i3VsFWEU1pzKiulhafWiSB12AahrPOO2Vp7H0CAE4LN0fOpd7zocPR5MPsmO9-2NvrumA1USlKiNIERFSfUpS7n5IPpU7O36c8AMZM9M5kxkxlDuZHmZG_MPZ1zP13cHcYfL0EpueZSg2L_utZuAw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1786208901</pqid></control><display><type>article</type><title>Effect of de-trapping on carrier transport process in semi-insulating CdZnTe</title><source>IOP Publishing Journals</source><creator>郭榕榕介万奇查钢强徐亚东冯涛王涛杜卓同</creator><creatorcontrib>郭榕榕介万奇查钢强徐亚东冯涛王涛杜卓同</creatorcontrib><description>The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V-s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>EISSN: 1741-4199</identifier><identifier>DOI: 10.1088/1674-1056/24/6/067203</identifier><language>eng</language><subject>Cadmium zinc tellurides ; Carrier transport ; CdZnTe ; Electric potential ; Electron mobility ; Mathematical analysis ; Trapping ; Voltage ; Waveforms ; 传输过程 ; 俘获 ; 半绝缘 ; 电场增强 ; 电子迁移率 ; 瞬态电流 ; 载流子</subject><ispartof>Chinese physics B, 2015-06, Vol.24 (6), p.511-515</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c313t-cf96411461cf711db291b80422d4267895e2ac5f69fbf58acec3ad9eef151c553</citedby><cites>FETCH-LOGICAL-c313t-cf96411461cf711db291b80422d4267895e2ac5f69fbf58acec3ad9eef151c553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>郭榕榕介万奇查钢强徐亚东冯涛王涛杜卓同</creatorcontrib><title>Effect of de-trapping on carrier transport process in semi-insulating CdZnTe</title><title>Chinese physics B</title><addtitle>Chinese Physics</addtitle><description>The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V-s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.</description><subject>Cadmium zinc tellurides</subject><subject>Carrier transport</subject><subject>CdZnTe</subject><subject>Electric potential</subject><subject>Electron mobility</subject><subject>Mathematical analysis</subject><subject>Trapping</subject><subject>Voltage</subject><subject>Waveforms</subject><subject>传输过程</subject><subject>俘获</subject><subject>半绝缘</subject><subject>电场增强</subject><subject>电子迁移率</subject><subject>瞬态电流</subject><subject>载流子</subject><issn>1674-1056</issn><issn>2058-3834</issn><issn>1741-4199</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEQhoMoWKs_QQievKybydcmRym1CgUv9eIlpNmkrmyz22R78N-7S0tPA8Pzvsw8CD0CeQGiVAmy4gUQIUvKS1kSWVHCrtCMEqEKphi_RrMLc4vucv4lRAKhbIbWyxC8G3AXcO2LIdm-b-IOdxE7m1LjEx53MfddGnCfOudzxk3E2e-boon52Nph4hf1d9z4e3QTbJv9w3nO0dfbcrN4L9afq4_F67pwDNhQuKAlB-ASXKgA6i3VsFWEU1pzKiulhafWiSB12AahrPOO2Vp7H0CAE4LN0fOpd7zocPR5MPsmO9-2NvrumA1USlKiNIERFSfUpS7n5IPpU7O36c8AMZM9M5kxkxlDuZHmZG_MPZ1zP13cHcYfL0EpueZSg2L_utZuAw</recordid><startdate>20150601</startdate><enddate>20150601</enddate><creator>郭榕榕介万奇查钢强徐亚东冯涛王涛杜卓同</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20150601</creationdate><title>Effect of de-trapping on carrier transport process in semi-insulating CdZnTe</title><author>郭榕榕介万奇查钢强徐亚东冯涛王涛杜卓同</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c313t-cf96411461cf711db291b80422d4267895e2ac5f69fbf58acec3ad9eef151c553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Cadmium zinc tellurides</topic><topic>Carrier transport</topic><topic>CdZnTe</topic><topic>Electric potential</topic><topic>Electron mobility</topic><topic>Mathematical analysis</topic><topic>Trapping</topic><topic>Voltage</topic><topic>Waveforms</topic><topic>传输过程</topic><topic>俘获</topic><topic>半绝缘</topic><topic>电场增强</topic><topic>电子迁移率</topic><topic>瞬态电流</topic><topic>载流子</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>郭榕榕介万奇查钢强徐亚东冯涛王涛杜卓同</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>郭榕榕介万奇查钢强徐亚东冯涛王涛杜卓同</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of de-trapping on carrier transport process in semi-insulating CdZnTe</atitle><jtitle>Chinese physics B</jtitle><addtitle>Chinese Physics</addtitle><date>2015-06-01</date><risdate>2015</risdate><volume>24</volume><issue>6</issue><spage>511</spage><epage>515</epage><pages>511-515</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><eissn>1741-4199</eissn><abstract>The effect of de-trapping on the carrier transport process in the CdZ＇nTe detector is studied by laser beam-induced transient current （LBIC） measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole-Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/V-s and the corresponding electron mobility-lifetime product is found to be 1.32 × 10-3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.</abstract><doi>10.1088/1674-1056/24/6/067203</doi><tpages>5</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 1674-1056
ispartof	Chinese physics B, 2015-06, Vol.24 (6), p.511-515
issn	1674-1056 2058-3834 1741-4199
language	eng
recordid	cdi_proquest_miscellaneous_1786208901
source	IOP Publishing Journals
subjects	Cadmium zinc tellurides Carrier transport CdZnTe Electric potential Electron mobility Mathematical analysis Trapping Voltage Waveforms 传输过程俘获半绝缘电场增强电子迁移率瞬态电流载流子
title	Effect of de-trapping on carrier transport process in semi-insulating CdZnTe
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T09%3A06%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20de-trapping%20on%20carrier%20transport%20process%20in%20semi-insulating%20CdZnTe&rft.jtitle=Chinese%20physics%20B&rft.au=%E9%83%AD%E6%A6%95%E6%A6%95%20%E4%BB%8B%E4%B8%87%E5%A5%87%20%E6%9F%A5%E9%92%A2%E5%BC%BA%20%E5%BE%90%E4%BA%9A%E4%B8%9C%20%E5%86%AF%E6%B6%9B%20%E7%8E%8B%E6%B6%9B%20%E6%9D%9C%E5%8D%93%E5%90%8C&rft.date=2015-06-01&rft.volume=24&rft.issue=6&rft.spage=511&rft.epage=515&rft.pages=511-515&rft.issn=1674-1056&rft.eissn=2058-3834&rft_id=info:doi/10.1088/1674-1056/24/6/067203&rft_dat=%3Cproquest_cross%3E1786208901%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1786208901&rft_id=info:pmid/&rft_cqvip_id=664946918&rfr_iscdi=true