Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

In this work we report on the three dominant trapping mechanisms affecting the dynamic performance of a double‐heterostructure GaN‐based MIS‐HEMT grown on silicon substrate. In the OFF‐state, with high drain voltage and pinched‐off 2DEG, the dominant mechanism is the charge‐trapping in the gate‐drai...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2015-05, Vol.212 (5), p.1122-1129
Hauptverfasser:	Bisi, Davide, Meneghini, Matteo, Van Hove, Marleen, Marcon, Denis, Stoffels, Steve, Wu, Tian-Li, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico
Format:	Artikel
Sprache:	eng
Schlagworte:	buffer layers charge carrier trapping Dielectric strength Drains Dynamics Electric potential GaN Gates high electron mobility transistors hot electrons metal-insulator-semiconductor structures Silicon substrates Trapping Voltage
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