Interlayer resonant Raman modes in few-layer MoS2
We report two first-order Raman modes in the spectra of few-layer MoS2 at 286 and 471 cm-1 that are only observed at excitation energies above 2.4 eV. We show that these normally not observed modes are interlayer modes related to symmetry-forbidden modes of the single layer. Based on group theory, w...
Gespeichert in:
Veröffentlicht in: | Physical review. B 2015-06, Vol.91 (23) |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 23 |
container_start_page | |
container_title | Physical review. B |
container_volume | 91 |
creator | Scheuschner, Nils Gillen, Roland Staiger, Matthias Maultzsch, Janina |
description | We report two first-order Raman modes in the spectra of few-layer MoS2 at 286 and 471 cm-1 that are only observed at excitation energies above 2.4 eV. We show that these normally not observed modes are interlayer modes related to symmetry-forbidden modes of the single layer. Based on group theory, we provide a general treatment and systematic classification of all phonon modes in few-layer crystals with inversion symmetry and/or horizontal reflection symmetry. The results can thus be applied to different materials like few-layer graphene, transition-metal dichalcogenides, or BN. Moreover, the few-layer specific Raman modes are strongly resonant with the C optical transition in MoS2. We conclude that the corresponding exciton wave function is extended over all layers of the few-layer MoS2, in contrast to the A and B excitons. |
doi_str_mv | 10.1103/PhysRevB.91.235409 |
format | Article |
fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1786202049</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1786202049</sourcerecordid><originalsourceid>FETCH-LOGICAL-p188t-7e013c127f55f34328ceb22bb2f3fd3b1371fc64941a1c5774a23ca4f4b29d303</originalsourceid><addsrcrecordid>eNo9jLtOwzAUQC0EElXpDzBlZEm4DyeOR6h4VCoCFZgrx7kWRalT4hTUv2coYjpnODpKXSIUiMDXLx-HtJLv28JiQVxqsCdqQrqyubWVPf33Es7VLKVPAMAKrAE7UbiIowydO8iQDZL66OKYrdzWxWzbt5KyTcyC_OTH4ql_pQt1FlyXZPbHqXq_v3ubP-bL54fF_GaZ77Cux9wIIHskE8oysGaqvTRETUOBQ8sNssHgK201OvSlMdoRe6eDbsi2DDxVV8fvbui_9pLG9XaTvHSdi9Lv0xpNXREQaMu_Y1NJQw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1786202049</pqid></control><display><type>article</type><title>Interlayer resonant Raman modes in few-layer MoS2</title><source>American Physical Society Journals</source><creator>Scheuschner, Nils ; Gillen, Roland ; Staiger, Matthias ; Maultzsch, Janina</creator><creatorcontrib>Scheuschner, Nils ; Gillen, Roland ; Staiger, Matthias ; Maultzsch, Janina</creatorcontrib><description>We report two first-order Raman modes in the spectra of few-layer MoS2 at 286 and 471 cm-1 that are only observed at excitation energies above 2.4 eV. We show that these normally not observed modes are interlayer modes related to symmetry-forbidden modes of the single layer. Based on group theory, we provide a general treatment and systematic classification of all phonon modes in few-layer crystals with inversion symmetry and/or horizontal reflection symmetry. The results can thus be applied to different materials like few-layer graphene, transition-metal dichalcogenides, or BN. Moreover, the few-layer specific Raman modes are strongly resonant with the C optical transition in MoS2. We conclude that the corresponding exciton wave function is extended over all layers of the few-layer MoS2, in contrast to the A and B excitons.</description><identifier>ISSN: 2469-9950</identifier><identifier>EISSN: 2469-9969</identifier><identifier>DOI: 10.1103/PhysRevB.91.235409</identifier><language>eng</language><subject>Condensed matter ; Excitation ; Graphene ; Interlayers ; Molybdenum disulfide ; Optical transition ; Spectra ; Symmetry</subject><ispartof>Physical review. B, 2015-06, Vol.91 (23)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Scheuschner, Nils</creatorcontrib><creatorcontrib>Gillen, Roland</creatorcontrib><creatorcontrib>Staiger, Matthias</creatorcontrib><creatorcontrib>Maultzsch, Janina</creatorcontrib><title>Interlayer resonant Raman modes in few-layer MoS2</title><title>Physical review. B</title><description>We report two first-order Raman modes in the spectra of few-layer MoS2 at 286 and 471 cm-1 that are only observed at excitation energies above 2.4 eV. We show that these normally not observed modes are interlayer modes related to symmetry-forbidden modes of the single layer. Based on group theory, we provide a general treatment and systematic classification of all phonon modes in few-layer crystals with inversion symmetry and/or horizontal reflection symmetry. The results can thus be applied to different materials like few-layer graphene, transition-metal dichalcogenides, or BN. Moreover, the few-layer specific Raman modes are strongly resonant with the C optical transition in MoS2. We conclude that the corresponding exciton wave function is extended over all layers of the few-layer MoS2, in contrast to the A and B excitons.</description><subject>Condensed matter</subject><subject>Excitation</subject><subject>Graphene</subject><subject>Interlayers</subject><subject>Molybdenum disulfide</subject><subject>Optical transition</subject><subject>Spectra</subject><subject>Symmetry</subject><issn>2469-9950</issn><issn>2469-9969</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo9jLtOwzAUQC0EElXpDzBlZEm4DyeOR6h4VCoCFZgrx7kWRalT4hTUv2coYjpnODpKXSIUiMDXLx-HtJLv28JiQVxqsCdqQrqyubWVPf33Es7VLKVPAMAKrAE7UbiIowydO8iQDZL66OKYrdzWxWzbt5KyTcyC_OTH4ql_pQt1FlyXZPbHqXq_v3ubP-bL54fF_GaZ77Cux9wIIHskE8oysGaqvTRETUOBQ8sNssHgK201OvSlMdoRe6eDbsi2DDxVV8fvbui_9pLG9XaTvHSdi9Lv0xpNXREQaMu_Y1NJQw</recordid><startdate>20150608</startdate><enddate>20150608</enddate><creator>Scheuschner, Nils</creator><creator>Gillen, Roland</creator><creator>Staiger, Matthias</creator><creator>Maultzsch, Janina</creator><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20150608</creationdate><title>Interlayer resonant Raman modes in few-layer MoS2</title><author>Scheuschner, Nils ; Gillen, Roland ; Staiger, Matthias ; Maultzsch, Janina</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p188t-7e013c127f55f34328ceb22bb2f3fd3b1371fc64941a1c5774a23ca4f4b29d303</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Condensed matter</topic><topic>Excitation</topic><topic>Graphene</topic><topic>Interlayers</topic><topic>Molybdenum disulfide</topic><topic>Optical transition</topic><topic>Spectra</topic><topic>Symmetry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Scheuschner, Nils</creatorcontrib><creatorcontrib>Gillen, Roland</creatorcontrib><creatorcontrib>Staiger, Matthias</creatorcontrib><creatorcontrib>Maultzsch, Janina</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical review. B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Scheuschner, Nils</au><au>Gillen, Roland</au><au>Staiger, Matthias</au><au>Maultzsch, Janina</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Interlayer resonant Raman modes in few-layer MoS2</atitle><jtitle>Physical review. B</jtitle><date>2015-06-08</date><risdate>2015</risdate><volume>91</volume><issue>23</issue><issn>2469-9950</issn><eissn>2469-9969</eissn><abstract>We report two first-order Raman modes in the spectra of few-layer MoS2 at 286 and 471 cm-1 that are only observed at excitation energies above 2.4 eV. We show that these normally not observed modes are interlayer modes related to symmetry-forbidden modes of the single layer. Based on group theory, we provide a general treatment and systematic classification of all phonon modes in few-layer crystals with inversion symmetry and/or horizontal reflection symmetry. The results can thus be applied to different materials like few-layer graphene, transition-metal dichalcogenides, or BN. Moreover, the few-layer specific Raman modes are strongly resonant with the C optical transition in MoS2. We conclude that the corresponding exciton wave function is extended over all layers of the few-layer MoS2, in contrast to the A and B excitons.</abstract><doi>10.1103/PhysRevB.91.235409</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 2469-9950 |
ispartof | Physical review. B, 2015-06, Vol.91 (23) |
issn | 2469-9950 2469-9969 |
language | eng |
recordid | cdi_proquest_miscellaneous_1786202049 |
source | American Physical Society Journals |
subjects | Condensed matter Excitation Graphene Interlayers Molybdenum disulfide Optical transition Spectra Symmetry |
title | Interlayer resonant Raman modes in few-layer MoS2 |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T01%3A35%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Interlayer%20resonant%20Raman%20modes%20in%20few-layer%20MoS2&rft.jtitle=Physical%20review.%20B&rft.au=Scheuschner,%20Nils&rft.date=2015-06-08&rft.volume=91&rft.issue=23&rft.issn=2469-9950&rft.eissn=2469-9969&rft_id=info:doi/10.1103/PhysRevB.91.235409&rft_dat=%3Cproquest%3E1786202049%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1786202049&rft_id=info:pmid/&rfr_iscdi=true |