Combinatorial HV-CVD survey of barium triisopropyl cyclopentadienyl and titanium tetraisopropoxide for the deposition of BaTiO sub(3)

Barium titanate is a very promising material for the integration of optical communication into electronic integrated circuits. For a successful integration into CMOS compatible technology, a growth process has to be found which allows forming crystalline BaTiO sub(3) at sufficiently low temperatures. We describe the combinatorial analysis of BaTiO sub(3) formation by high vacuum chemical vapor deposition using barium triisopropyl cyclopentadienyl and titanium tetraisopropoxide as metal sources; water, oxygen, or ozone are used as oxidizing agents. We analyzed the impact of these oxidizing agents on the interaction of the precursor molecules on the substrate surface. Furthermore, we characterized the films concerning chemical composition and identified growth conditions leading to deposit composition corresponding to the stoichiometric BaTiO sub(3) formation. XRD analysis confirms the formation of crystalline BaTiO sub(3) phases for deposition temperatures as low as 370 degree C. We report about the combinatorial characterization of barium cyclopentadienyl and titanium tetraisopropoxide precursor interaction and fast determination of parameters for the formation of crystalline barium titanate using high vacuum chemical vapor deposition.