Improvement of vertical light extraction from GaN-based LEDs on moth-eye patterned sapphire substrates
A newly developed moth‐eye patterned sapphire substrate (MPSS) technology increased light extraction efficiency (LEE) in the vertical direction in nitride‐based blue light emitting diodes (LEDs). MPSS is characterized by a submicron‐scale periodical structure that exerts the Bragg diffraction effect...
Gespeichert in:
| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2015-05, Vol.212 (5), p.935-940 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 940 |
|---|---|
| container_issue | 5 |
| container_start_page | 935 |
| container_title | Physica status solidi. A, Applications and materials science |
| container_volume | 212 |
| creator | Ohya, Masaki Naniwae, Koichi Kondo, Toshiyuki Suzuki, Atsushi Mori, Midori Kitano, Tsukasa Usui, Akane Kamiyama, Satoshi |
| description | A newly developed moth‐eye patterned sapphire substrate (MPSS) technology increased light extraction efficiency (LEE) in the vertical direction in nitride‐based blue light emitting diodes (LEDs). MPSS is characterized by a submicron‐scale periodical structure that exerts the Bragg diffraction effect at the interface between gallium nitride (GaN) and sapphire. Through simulations and experiments, it was revealed that emphasis of the diffraction effect by optimizing the MPSS structure enhanced vertical emission from LEDs. As a result, resin‐encapsulated, large‐sized LEDs on MPSS with a large diffraction effect achieved a high LEE of 0.76 that was comparable to that of commercially available thin‐film LEDs.
Bird's‐eye view of scanning electron microscope (SEM) image of MPSS. |
| doi_str_mv | 10.1002/pssa.201431725 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1786200702</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3680909941</sourcerecordid><originalsourceid>FETCH-LOGICAL-c5945-a836d8b48befa12048fc47bceee805dbde8acef91a32da6c0e21a0c08ce318e3</originalsourceid><addsrcrecordid>eNqFkE1PGzEQhldVK5VSrpwt9dLLhrH3y3tEKQSkCIoSiaM1651tlu4XHgfIv8coKEK99OSR53lGM28UnUqYSQB1NjHjTIFME1mo7FN0JHWu4jyR5edDDfA1-sb8AJBmaSGPoua6n9z4RD0NXoyNeCLnW4ud6No_Gy_oxTu0vh0H0bixFwu8iStkqsXy4heL8N2PfhPTjsSE3pMbQotxmjatI8HbioPvib9HXxrsmE7e3-NofXmxnl_Fy9vF9fx8GdusTLMYdZLXukp1RQ1KBalubFpUlog0ZHVVk0ZLTSkxUTXmFkhJBAvaUiI1JcfRz_3YcNPjltibvmVLXYcDjVs2sggxABSgAvrjH_Rh3LohLGdkrgEyyEsI1GxPWTcyO2rM5Noe3c5IMG-pm7fUzSH1IJR74bntaPcf2vxerc4_uvHebdnTy8FF99fkRVJk5v5mYdbzbJneLZRZJa_GCpeA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1680050690</pqid></control><display><type>article</type><title>Improvement of vertical light extraction from GaN-based LEDs on moth-eye patterned sapphire substrates</title><source>Access via Wiley Online Library</source><creator>Ohya, Masaki ; Naniwae, Koichi ; Kondo, Toshiyuki ; Suzuki, Atsushi ; Mori, Midori ; Kitano, Tsukasa ; Usui, Akane ; Kamiyama, Satoshi</creator><creatorcontrib>Ohya, Masaki ; Naniwae, Koichi ; Kondo, Toshiyuki ; Suzuki, Atsushi ; Mori, Midori ; Kitano, Tsukasa ; Usui, Akane ; Kamiyama, Satoshi</creatorcontrib><description>A newly developed moth‐eye patterned sapphire substrate (MPSS) technology increased light extraction efficiency (LEE) in the vertical direction in nitride‐based blue light emitting diodes (LEDs). MPSS is characterized by a submicron‐scale periodical structure that exerts the Bragg diffraction effect at the interface between gallium nitride (GaN) and sapphire. Through simulations and experiments, it was revealed that emphasis of the diffraction effect by optimizing the MPSS structure enhanced vertical emission from LEDs. As a result, resin‐encapsulated, large‐sized LEDs on MPSS with a large diffraction effect achieved a high LEE of 0.76 that was comparable to that of commercially available thin‐film LEDs.
Bird's‐eye view of scanning electron microscope (SEM) image of MPSS.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201431725</identifier><language>eng</language><publisher>Weinheim: Blackwell Publishing Ltd</publisher><subject>Diffraction ; Electron microscopes ; Extraction ; Gallium nitrides ; GaN ; Light emitting diodes ; light extraction ; Optimization ; patterning ; Sapphire ; Scanning electron microscopy ; Simulation ; substrates</subject><ispartof>Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.935-940</ispartof><rights>2015 WILEY−VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c5945-a836d8b48befa12048fc47bceee805dbde8acef91a32da6c0e21a0c08ce318e3</citedby><cites>FETCH-LOGICAL-c5945-a836d8b48befa12048fc47bceee805dbde8acef91a32da6c0e21a0c08ce318e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.201431725$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.201431725$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Ohya, Masaki</creatorcontrib><creatorcontrib>Naniwae, Koichi</creatorcontrib><creatorcontrib>Kondo, Toshiyuki</creatorcontrib><creatorcontrib>Suzuki, Atsushi</creatorcontrib><creatorcontrib>Mori, Midori</creatorcontrib><creatorcontrib>Kitano, Tsukasa</creatorcontrib><creatorcontrib>Usui, Akane</creatorcontrib><creatorcontrib>Kamiyama, Satoshi</creatorcontrib><title>Improvement of vertical light extraction from GaN-based LEDs on moth-eye patterned sapphire substrates</title><title>Physica status solidi. A, Applications and materials science</title><addtitle>Phys. Status Solidi A</addtitle><description>A newly developed moth‐eye patterned sapphire substrate (MPSS) technology increased light extraction efficiency (LEE) in the vertical direction in nitride‐based blue light emitting diodes (LEDs). MPSS is characterized by a submicron‐scale periodical structure that exerts the Bragg diffraction effect at the interface between gallium nitride (GaN) and sapphire. Through simulations and experiments, it was revealed that emphasis of the diffraction effect by optimizing the MPSS structure enhanced vertical emission from LEDs. As a result, resin‐encapsulated, large‐sized LEDs on MPSS with a large diffraction effect achieved a high LEE of 0.76 that was comparable to that of commercially available thin‐film LEDs.
Bird's‐eye view of scanning electron microscope (SEM) image of MPSS.</description><subject>Diffraction</subject><subject>Electron microscopes</subject><subject>Extraction</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>Light emitting diodes</subject><subject>light extraction</subject><subject>Optimization</subject><subject>patterning</subject><subject>Sapphire</subject><subject>Scanning electron microscopy</subject><subject>Simulation</subject><subject>substrates</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqFkE1PGzEQhldVK5VSrpwt9dLLhrH3y3tEKQSkCIoSiaM1651tlu4XHgfIv8coKEK99OSR53lGM28UnUqYSQB1NjHjTIFME1mo7FN0JHWu4jyR5edDDfA1-sb8AJBmaSGPoua6n9z4RD0NXoyNeCLnW4ud6No_Gy_oxTu0vh0H0bixFwu8iStkqsXy4heL8N2PfhPTjsSE3pMbQotxmjatI8HbioPvib9HXxrsmE7e3-NofXmxnl_Fy9vF9fx8GdusTLMYdZLXukp1RQ1KBalubFpUlog0ZHVVk0ZLTSkxUTXmFkhJBAvaUiI1JcfRz_3YcNPjltibvmVLXYcDjVs2sggxABSgAvrjH_Rh3LohLGdkrgEyyEsI1GxPWTcyO2rM5Noe3c5IMG-pm7fUzSH1IJR74bntaPcf2vxerc4_uvHebdnTy8FF99fkRVJk5v5mYdbzbJneLZRZJa_GCpeA</recordid><startdate>201505</startdate><enddate>201505</enddate><creator>Ohya, Masaki</creator><creator>Naniwae, Koichi</creator><creator>Kondo, Toshiyuki</creator><creator>Suzuki, Atsushi</creator><creator>Mori, Midori</creator><creator>Kitano, Tsukasa</creator><creator>Usui, Akane</creator><creator>Kamiyama, Satoshi</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7QF</scope><scope>7QQ</scope></search><sort><creationdate>201505</creationdate><title>Improvement of vertical light extraction from GaN-based LEDs on moth-eye patterned sapphire substrates</title><author>Ohya, Masaki ; Naniwae, Koichi ; Kondo, Toshiyuki ; Suzuki, Atsushi ; Mori, Midori ; Kitano, Tsukasa ; Usui, Akane ; Kamiyama, Satoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c5945-a836d8b48befa12048fc47bceee805dbde8acef91a32da6c0e21a0c08ce318e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Diffraction</topic><topic>Electron microscopes</topic><topic>Extraction</topic><topic>Gallium nitrides</topic><topic>GaN</topic><topic>Light emitting diodes</topic><topic>light extraction</topic><topic>Optimization</topic><topic>patterning</topic><topic>Sapphire</topic><topic>Scanning electron microscopy</topic><topic>Simulation</topic><topic>substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ohya, Masaki</creatorcontrib><creatorcontrib>Naniwae, Koichi</creatorcontrib><creatorcontrib>Kondo, Toshiyuki</creatorcontrib><creatorcontrib>Suzuki, Atsushi</creatorcontrib><creatorcontrib>Mori, Midori</creatorcontrib><creatorcontrib>Kitano, Tsukasa</creatorcontrib><creatorcontrib>Usui, Akane</creatorcontrib><creatorcontrib>Kamiyama, Satoshi</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ohya, Masaki</au><au>Naniwae, Koichi</au><au>Kondo, Toshiyuki</au><au>Suzuki, Atsushi</au><au>Mori, Midori</au><au>Kitano, Tsukasa</au><au>Usui, Akane</au><au>Kamiyama, Satoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improvement of vertical light extraction from GaN-based LEDs on moth-eye patterned sapphire substrates</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><addtitle>Phys. Status Solidi A</addtitle><date>2015-05</date><risdate>2015</risdate><volume>212</volume><issue>5</issue><spage>935</spage><epage>940</epage><pages>935-940</pages><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>A newly developed moth‐eye patterned sapphire substrate (MPSS) technology increased light extraction efficiency (LEE) in the vertical direction in nitride‐based blue light emitting diodes (LEDs). MPSS is characterized by a submicron‐scale periodical structure that exerts the Bragg diffraction effect at the interface between gallium nitride (GaN) and sapphire. Through simulations and experiments, it was revealed that emphasis of the diffraction effect by optimizing the MPSS structure enhanced vertical emission from LEDs. As a result, resin‐encapsulated, large‐sized LEDs on MPSS with a large diffraction effect achieved a high LEE of 0.76 that was comparable to that of commercially available thin‐film LEDs.
Bird's‐eye view of scanning electron microscope (SEM) image of MPSS.</abstract><cop>Weinheim</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/pssa.201431725</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1862-6300 |
| ispartof | Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.935-940 |
| issn | 1862-6300 1862-6319 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1786200702 |
| source | Access via Wiley Online Library |
| subjects | Diffraction Electron microscopes Extraction Gallium nitrides GaN Light emitting diodes light extraction Optimization patterning Sapphire Scanning electron microscopy Simulation substrates |
| title | Improvement of vertical light extraction from GaN-based LEDs on moth-eye patterned sapphire substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T16%3A57%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improvement%20of%20vertical%20light%20extraction%20from%20GaN-based%20LEDs%20on%20moth-eye%20patterned%20sapphire%20substrates&rft.jtitle=Physica%20status%20solidi.%20A,%20Applications%20and%20materials%20science&rft.au=Ohya,%20Masaki&rft.date=2015-05&rft.volume=212&rft.issue=5&rft.spage=935&rft.epage=940&rft.pages=935-940&rft.issn=1862-6300&rft.eissn=1862-6319&rft_id=info:doi/10.1002/pssa.201431725&rft_dat=%3Cproquest_cross%3E3680909941%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1680050690&rft_id=info:pmid/&rfr_iscdi=true |