Hydrogen-Induced Grain Growth in Electrodeposited Cu Films
We proposed that the grain growth observed in electrodeposited Cu films at room temperature is caused by hydrogen-induced superabundant vacancy-hydrogen clusters. In this study, the relation between grain growth and hydrogen behavior in the electrodeposited Cu films was investigated using different...
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| Veröffentlicht in: | Journal of the Japan Institute of Metals and Materials 2015, Vol.79(3), pp.78-81 |
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| container_title | Journal of the Japan Institute of Metals and Materials |
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| creator | Yoshida, Hiroki Yamazaki, Takaaki Adachi, Takayoshi Fukumuro, Naoki Yae, Shinji Fukai, Yuh |
| description | We proposed that the grain growth observed in electrodeposited Cu films at room temperature is caused by hydrogen-induced superabundant vacancy-hydrogen clusters. In this study, the relation between grain growth and hydrogen behavior in the electrodeposited Cu films was investigated using different types of plating baths. The Cu films were electrodeposited from an acid sulfate bath, an acid sulfate bath containing chloride ion, polyethylene glycol, and bis(3-sulfopropyl)disulfide (additive-containing bath), a pyrophosphate bath, and a chloride bath containing citric acid. Thermal desorption spectroscopy revealed that extremely high concentration of hydrogen is contained in the Cu films deposited from the additive-containing bath and the chloride bath. The room-temperature grain growth was observed in these Cu films with passage of time after deposition, concurrently with hydrogen desorption. Such grain growths were not observed in the Cu films with low hydrogen content deposited from the acid sulfate bath and the pyrophosphate bath. The changes in crystal orientation and internal stress during the grain growth of the Cu films differed between the additive-containing bath and the chloride bath. These results suggest that the room-temperature grain growth was induced by the co-deposited hydrogen in films. |
| doi_str_mv | 10.2320/jinstmet.JC201406 |
| format | Article |
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In this study, the relation between grain growth and hydrogen behavior in the electrodeposited Cu films was investigated using different types of plating baths. The Cu films were electrodeposited from an acid sulfate bath, an acid sulfate bath containing chloride ion, polyethylene glycol, and bis(3-sulfopropyl)disulfide (additive-containing bath), a pyrophosphate bath, and a chloride bath containing citric acid. Thermal desorption spectroscopy revealed that extremely high concentration of hydrogen is contained in the Cu films deposited from the additive-containing bath and the chloride bath. The room-temperature grain growth was observed in these Cu films with passage of time after deposition, concurrently with hydrogen desorption. Such grain growths were not observed in the Cu films with low hydrogen content deposited from the acid sulfate bath and the pyrophosphate bath. The changes in crystal orientation and internal stress during the grain growth of the Cu films differed between the additive-containing bath and the chloride bath. These results suggest that the room-temperature grain growth was induced by the co-deposited hydrogen in films.</description><identifier>ISSN: 0021-4876</identifier><identifier>EISSN: 1880-6880</identifier><identifier>DOI: 10.2320/jinstmet.JC201406</identifier><language>eng ; jpn</language><publisher>Sendai: The Japan Institute of Metals and Materials</publisher><subject>Acids ; Chloride ; Chloride ions ; Chlorides ; Citric acid ; Copper ; Crystal growth ; Crystal structure ; Deposition ; Desorption ; electrodeposited copper film ; Electrodeposition ; Grain growth ; Hydrogen ; hydrogen-induced superabundant vacancies ; Lattice vacancies ; Metal films ; Plating baths ; Polyethylene glycol ; Residual stress ; Room temperature ; room temperature recrystallisation ; Sulfates ; Thermal desorption spectroscopy</subject><ispartof>Journal of the Japan Institute of Metals and Materials, 2015, Vol.79(3), pp.78-81</ispartof><rights>2015 The Japan Institute of Metals and Materials</rights><rights>Copyright Japan Science and Technology Agency 2015</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c343t-8759423e69041163d4fee84b12dc2aa0e999eff2a23550097c136138b875d6a83</citedby><cites>FETCH-LOGICAL-c343t-8759423e69041163d4fee84b12dc2aa0e999eff2a23550097c136138b875d6a83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,1877,27901,27902</link.rule.ids></links><search><creatorcontrib>Yoshida, Hiroki</creatorcontrib><creatorcontrib>Yamazaki, Takaaki</creatorcontrib><creatorcontrib>Adachi, Takayoshi</creatorcontrib><creatorcontrib>Fukumuro, Naoki</creatorcontrib><creatorcontrib>Yae, Shinji</creatorcontrib><creatorcontrib>Fukai, Yuh</creatorcontrib><title>Hydrogen-Induced Grain Growth in Electrodeposited Cu Films</title><title>Journal of the Japan Institute of Metals and Materials</title><addtitle>J. Japan Inst. Metals and Materials</addtitle><description>We proposed that the grain growth observed in electrodeposited Cu films at room temperature is caused by hydrogen-induced superabundant vacancy-hydrogen clusters. In this study, the relation between grain growth and hydrogen behavior in the electrodeposited Cu films was investigated using different types of plating baths. The Cu films were electrodeposited from an acid sulfate bath, an acid sulfate bath containing chloride ion, polyethylene glycol, and bis(3-sulfopropyl)disulfide (additive-containing bath), a pyrophosphate bath, and a chloride bath containing citric acid. Thermal desorption spectroscopy revealed that extremely high concentration of hydrogen is contained in the Cu films deposited from the additive-containing bath and the chloride bath. The room-temperature grain growth was observed in these Cu films with passage of time after deposition, concurrently with hydrogen desorption. Such grain growths were not observed in the Cu films with low hydrogen content deposited from the acid sulfate bath and the pyrophosphate bath. The changes in crystal orientation and internal stress during the grain growth of the Cu films differed between the additive-containing bath and the chloride bath. These results suggest that the room-temperature grain growth was induced by the co-deposited hydrogen in films.</description><subject>Acids</subject><subject>Chloride</subject><subject>Chloride ions</subject><subject>Chlorides</subject><subject>Citric acid</subject><subject>Copper</subject><subject>Crystal growth</subject><subject>Crystal structure</subject><subject>Deposition</subject><subject>Desorption</subject><subject>electrodeposited copper film</subject><subject>Electrodeposition</subject><subject>Grain growth</subject><subject>Hydrogen</subject><subject>hydrogen-induced superabundant vacancies</subject><subject>Lattice vacancies</subject><subject>Metal films</subject><subject>Plating baths</subject><subject>Polyethylene glycol</subject><subject>Residual stress</subject><subject>Room temperature</subject><subject>room temperature recrystallisation</subject><subject>Sulfates</subject><subject>Thermal desorption spectroscopy</subject><issn>0021-4876</issn><issn>1880-6880</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpdkE1LAzEQhoMoWGp_gLeCFy9b87GbTbxJsR9S8KLnkGZn25TdTU2ySP-9KbUVvLwzh-cZhhehe4InlFH8tLNdiC3EyduUYpJjfoUGRAic8RTXaIAxJVkuSn6LRiHYNcZYcsKxHKDnxaHybgNdtuyq3kA1nnttu5TuO27HaXttwETvKti7YGMCpv14Zps23KGbWjcBRr9ziD5nrx_TRbZ6ny-nL6vMsJzFTJSFzCkDLnFOCGdVXgOIfE1oZajWGKSUUNdUU1YU6bHSEMYJE-skVlwLNkSPp7t77756CFG1NhhoGt2B64MipeCkEJKWCX34h-5c77v0XaLSdcmk5IkiJ8p4F4KHWu29bbU_KILVsVB1LlSdC03O_OTsQtQbuBjaR2sa-DNKqdgxzuaFMFvtFXTsB6CygqQ</recordid><startdate>20150101</startdate><enddate>20150101</enddate><creator>Yoshida, Hiroki</creator><creator>Yamazaki, Takaaki</creator><creator>Adachi, Takayoshi</creator><creator>Fukumuro, Naoki</creator><creator>Yae, Shinji</creator><creator>Fukai, Yuh</creator><general>The Japan Institute of Metals and Materials</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20150101</creationdate><title>Hydrogen-Induced Grain Growth in Electrodeposited Cu Films</title><author>Yoshida, Hiroki ; Yamazaki, Takaaki ; Adachi, Takayoshi ; Fukumuro, Naoki ; Yae, Shinji ; Fukai, Yuh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c343t-8759423e69041163d4fee84b12dc2aa0e999eff2a23550097c136138b875d6a83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; jpn</language><creationdate>2015</creationdate><topic>Acids</topic><topic>Chloride</topic><topic>Chloride ions</topic><topic>Chlorides</topic><topic>Citric acid</topic><topic>Copper</topic><topic>Crystal growth</topic><topic>Crystal structure</topic><topic>Deposition</topic><topic>Desorption</topic><topic>electrodeposited copper film</topic><topic>Electrodeposition</topic><topic>Grain growth</topic><topic>Hydrogen</topic><topic>hydrogen-induced superabundant vacancies</topic><topic>Lattice vacancies</topic><topic>Metal films</topic><topic>Plating baths</topic><topic>Polyethylene glycol</topic><topic>Residual stress</topic><topic>Room temperature</topic><topic>room temperature recrystallisation</topic><topic>Sulfates</topic><topic>Thermal desorption spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoshida, Hiroki</creatorcontrib><creatorcontrib>Yamazaki, Takaaki</creatorcontrib><creatorcontrib>Adachi, Takayoshi</creatorcontrib><creatorcontrib>Fukumuro, Naoki</creatorcontrib><creatorcontrib>Yae, Shinji</creatorcontrib><creatorcontrib>Fukai, Yuh</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the Japan Institute of Metals and Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yoshida, Hiroki</au><au>Yamazaki, Takaaki</au><au>Adachi, Takayoshi</au><au>Fukumuro, Naoki</au><au>Yae, Shinji</au><au>Fukai, Yuh</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hydrogen-Induced Grain Growth in Electrodeposited Cu Films</atitle><jtitle>Journal of the Japan Institute of Metals and Materials</jtitle><addtitle>J. Japan Inst. Metals and Materials</addtitle><date>2015-01-01</date><risdate>2015</risdate><volume>79</volume><issue>3</issue><spage>78</spage><epage>81</epage><pages>78-81</pages><issn>0021-4876</issn><eissn>1880-6880</eissn><abstract>We proposed that the grain growth observed in electrodeposited Cu films at room temperature is caused by hydrogen-induced superabundant vacancy-hydrogen clusters. In this study, the relation between grain growth and hydrogen behavior in the electrodeposited Cu films was investigated using different types of plating baths. The Cu films were electrodeposited from an acid sulfate bath, an acid sulfate bath containing chloride ion, polyethylene glycol, and bis(3-sulfopropyl)disulfide (additive-containing bath), a pyrophosphate bath, and a chloride bath containing citric acid. Thermal desorption spectroscopy revealed that extremely high concentration of hydrogen is contained in the Cu films deposited from the additive-containing bath and the chloride bath. The room-temperature grain growth was observed in these Cu films with passage of time after deposition, concurrently with hydrogen desorption. Such grain growths were not observed in the Cu films with low hydrogen content deposited from the acid sulfate bath and the pyrophosphate bath. The changes in crystal orientation and internal stress during the grain growth of the Cu films differed between the additive-containing bath and the chloride bath. These results suggest that the room-temperature grain growth was induced by the co-deposited hydrogen in films.</abstract><cop>Sendai</cop><pub>The Japan Institute of Metals and Materials</pub><doi>10.2320/jinstmet.JC201406</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| source | J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals |
| subjects | Acids Chloride Chloride ions Chlorides Citric acid Copper Crystal growth Crystal structure Deposition Desorption electrodeposited copper film Electrodeposition Grain growth Hydrogen hydrogen-induced superabundant vacancies Lattice vacancies Metal films Plating baths Polyethylene glycol Residual stress Room temperature room temperature recrystallisation Sulfates Thermal desorption spectroscopy |
| title | Hydrogen-Induced Grain Growth in Electrodeposited Cu Films |
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