Improvement of Thermoelectric Performance and P-N Control for Metal-Doped β-Rhombohedral Boron
The effects of Cu-doping into beta -rhombohedral boron on the thermoelectric properties have been investigated. The electrical conductivity increases with increasing Cu concentration up to 5 at%, while a positive Seebeck coefficient monotonically decreases because of an increase in the carrier conce...
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| Veröffentlicht in: | Nihon Kinzoku Gakkai shi (1952) 2015, Vol.79 (11), p.581-585 |
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| container_title | Nihon Kinzoku Gakkai shi (1952) |
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| creator | Takagiwa, Yoshiki Kuroda, Norihide Imai, Erika Kanazawa, Ikuzo Hyodo, Hiroshi Soga, Kohei Kimura, Kaoru |
| description | The effects of Cu-doping into beta -rhombohedral boron on the thermoelectric properties have been investigated. The electrical conductivity increases with increasing Cu concentration up to 5 at%, while a positive Seebeck coefficient monotonically decreases because of an increase in the carrier concentration. Consequently, the power factor enhances by four times from 22 mu W m-1 K-2 to 90 mu W m-1 K-2 at 973 K. In addition, Cu-doping contributes to lower the thermal conductivity from 4.3 W m-1 K-1 to 2.3 W m-1 K-1 at 973 K due to an increase in phonon scattering events. The dimensionless figure of merit, ZT, enhances from 0.006 to 0.038 at 973 K for Cu4B105 as p-type. The observed ZT is higher than that of conventional thermoelectric boride B4C. |
| doi_str_mv | 10.2320/jinstmet.JA201507 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1786157327</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1786157327</sourcerecordid><originalsourceid>FETCH-LOGICAL-c203t-e43fcea5b8ee18b33c04d142d5c9fd2f0bf910f2496466dbe53a95ce5c332a1d3</originalsourceid><addsrcrecordid>eNo1kMtKAzEUhoMoWGofwF2WblJzm0uXtd4qVYvUdcgkJ3RkMqlJKvhaPojP5Eh18x9-zseB8yF0zuiUC04v39o-ZQ95-jDnlBW0OkIjVteUlEMcoxGlnBFZV-UpmqTUNkOXtZRlNUJq6XcxfICHPuPg8GYL0QfowOTYGryG6EL0ujeAdW_xmjzhRehzDB0eFvgRsu7IddiBxd9f5GUbfBO2YKPu8FWIoT9DJ053CSZ_c4xeb282i3uyer5bLuYrYjgVmYAUzoAumhqA1Y0QhkrLJLeFmTnLHW3cjFHH5ayUZWkbKISeFQYKIwTXzIoxujjcHb5530PKyrfJQNfpHsI-KVbVJSsqwasBZQfUxJBSBKd2sfU6fipG1a9P9e9T_fsUPz24bPQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1786157327</pqid></control><display><type>article</type><title>Improvement of Thermoelectric Performance and P-N Control for Metal-Doped β-Rhombohedral Boron</title><source>J-STAGE Free</source><source>EZB Electronic Journals Library</source><creator>Takagiwa, Yoshiki ; Kuroda, Norihide ; Imai, Erika ; Kanazawa, Ikuzo ; Hyodo, Hiroshi ; Soga, Kohei ; Kimura, Kaoru</creator><creatorcontrib>Takagiwa, Yoshiki ; Kuroda, Norihide ; Imai, Erika ; Kanazawa, Ikuzo ; Hyodo, Hiroshi ; Soga, Kohei ; Kimura, Kaoru</creatorcontrib><description>The effects of Cu-doping into beta -rhombohedral boron on the thermoelectric properties have been investigated. The electrical conductivity increases with increasing Cu concentration up to 5 at%, while a positive Seebeck coefficient monotonically decreases because of an increase in the carrier concentration. Consequently, the power factor enhances by four times from 22 mu W m-1 K-2 to 90 mu W m-1 K-2 at 973 K. In addition, Cu-doping contributes to lower the thermal conductivity from 4.3 W m-1 K-1 to 2.3 W m-1 K-1 at 973 K due to an increase in phonon scattering events. The dimensionless figure of merit, ZT, enhances from 0.006 to 0.038 at 973 K for Cu4B105 as p-type. The observed ZT is higher than that of conventional thermoelectric boride B4C.</description><identifier>ISSN: 0021-4876</identifier><identifier>EISSN: 1880-6880</identifier><identifier>DOI: 10.2320/jinstmet.JA201507</identifier><language>eng ; jpn</language><subject>Borides ; Boron ; Copper ; Electrical resistivity ; Resistivity ; Scattering ; Thermal conductivity ; Thermoelectricity</subject><ispartof>Nihon Kinzoku Gakkai shi (1952), 2015, Vol.79 (11), p.581-585</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c203t-e43fcea5b8ee18b33c04d142d5c9fd2f0bf910f2496466dbe53a95ce5c332a1d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids></links><search><creatorcontrib>Takagiwa, Yoshiki</creatorcontrib><creatorcontrib>Kuroda, Norihide</creatorcontrib><creatorcontrib>Imai, Erika</creatorcontrib><creatorcontrib>Kanazawa, Ikuzo</creatorcontrib><creatorcontrib>Hyodo, Hiroshi</creatorcontrib><creatorcontrib>Soga, Kohei</creatorcontrib><creatorcontrib>Kimura, Kaoru</creatorcontrib><title>Improvement of Thermoelectric Performance and P-N Control for Metal-Doped β-Rhombohedral Boron</title><title>Nihon Kinzoku Gakkai shi (1952)</title><description>The effects of Cu-doping into beta -rhombohedral boron on the thermoelectric properties have been investigated. The electrical conductivity increases with increasing Cu concentration up to 5 at%, while a positive Seebeck coefficient monotonically decreases because of an increase in the carrier concentration. Consequently, the power factor enhances by four times from 22 mu W m-1 K-2 to 90 mu W m-1 K-2 at 973 K. In addition, Cu-doping contributes to lower the thermal conductivity from 4.3 W m-1 K-1 to 2.3 W m-1 K-1 at 973 K due to an increase in phonon scattering events. The dimensionless figure of merit, ZT, enhances from 0.006 to 0.038 at 973 K for Cu4B105 as p-type. The observed ZT is higher than that of conventional thermoelectric boride B4C.</description><subject>Borides</subject><subject>Boron</subject><subject>Copper</subject><subject>Electrical resistivity</subject><subject>Resistivity</subject><subject>Scattering</subject><subject>Thermal conductivity</subject><subject>Thermoelectricity</subject><issn>0021-4876</issn><issn>1880-6880</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo1kMtKAzEUhoMoWGofwF2WblJzm0uXtd4qVYvUdcgkJ3RkMqlJKvhaPojP5Eh18x9-zseB8yF0zuiUC04v39o-ZQ95-jDnlBW0OkIjVteUlEMcoxGlnBFZV-UpmqTUNkOXtZRlNUJq6XcxfICHPuPg8GYL0QfowOTYGryG6EL0ujeAdW_xmjzhRehzDB0eFvgRsu7IddiBxd9f5GUbfBO2YKPu8FWIoT9DJ053CSZ_c4xeb282i3uyer5bLuYrYjgVmYAUzoAumhqA1Y0QhkrLJLeFmTnLHW3cjFHH5ayUZWkbKISeFQYKIwTXzIoxujjcHb5530PKyrfJQNfpHsI-KVbVJSsqwasBZQfUxJBSBKd2sfU6fipG1a9P9e9T_fsUPz24bPQ</recordid><startdate>2015</startdate><enddate>2015</enddate><creator>Takagiwa, Yoshiki</creator><creator>Kuroda, Norihide</creator><creator>Imai, Erika</creator><creator>Kanazawa, Ikuzo</creator><creator>Hyodo, Hiroshi</creator><creator>Soga, Kohei</creator><creator>Kimura, Kaoru</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>2015</creationdate><title>Improvement of Thermoelectric Performance and P-N Control for Metal-Doped β-Rhombohedral Boron</title><author>Takagiwa, Yoshiki ; Kuroda, Norihide ; Imai, Erika ; Kanazawa, Ikuzo ; Hyodo, Hiroshi ; Soga, Kohei ; Kimura, Kaoru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c203t-e43fcea5b8ee18b33c04d142d5c9fd2f0bf910f2496466dbe53a95ce5c332a1d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; jpn</language><creationdate>2015</creationdate><topic>Borides</topic><topic>Boron</topic><topic>Copper</topic><topic>Electrical resistivity</topic><topic>Resistivity</topic><topic>Scattering</topic><topic>Thermal conductivity</topic><topic>Thermoelectricity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takagiwa, Yoshiki</creatorcontrib><creatorcontrib>Kuroda, Norihide</creatorcontrib><creatorcontrib>Imai, Erika</creatorcontrib><creatorcontrib>Kanazawa, Ikuzo</creatorcontrib><creatorcontrib>Hyodo, Hiroshi</creatorcontrib><creatorcontrib>Soga, Kohei</creatorcontrib><creatorcontrib>Kimura, Kaoru</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Nihon Kinzoku Gakkai shi (1952)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takagiwa, Yoshiki</au><au>Kuroda, Norihide</au><au>Imai, Erika</au><au>Kanazawa, Ikuzo</au><au>Hyodo, Hiroshi</au><au>Soga, Kohei</au><au>Kimura, Kaoru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improvement of Thermoelectric Performance and P-N Control for Metal-Doped β-Rhombohedral Boron</atitle><jtitle>Nihon Kinzoku Gakkai shi (1952)</jtitle><date>2015</date><risdate>2015</risdate><volume>79</volume><issue>11</issue><spage>581</spage><epage>585</epage><pages>581-585</pages><issn>0021-4876</issn><eissn>1880-6880</eissn><abstract>The effects of Cu-doping into beta -rhombohedral boron on the thermoelectric properties have been investigated. The electrical conductivity increases with increasing Cu concentration up to 5 at%, while a positive Seebeck coefficient monotonically decreases because of an increase in the carrier concentration. Consequently, the power factor enhances by four times from 22 mu W m-1 K-2 to 90 mu W m-1 K-2 at 973 K. In addition, Cu-doping contributes to lower the thermal conductivity from 4.3 W m-1 K-1 to 2.3 W m-1 K-1 at 973 K due to an increase in phonon scattering events. The dimensionless figure of merit, ZT, enhances from 0.006 to 0.038 at 973 K for Cu4B105 as p-type. The observed ZT is higher than that of conventional thermoelectric boride B4C.</abstract><doi>10.2320/jinstmet.JA201507</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| language | eng ; jpn |
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| source | J-STAGE Free; EZB Electronic Journals Library |
| subjects | Borides Boron Copper Electrical resistivity Resistivity Scattering Thermal conductivity Thermoelectricity |
| title | Improvement of Thermoelectric Performance and P-N Control for Metal-Doped β-Rhombohedral Boron |
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