Fabrication of high-quality all-graphene devices with low contact resistances
All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of prist...
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| Veröffentlicht in: | Nano research 2014-10, Vol.7 (10), p.1449-1456 |
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| container_end_page | 1456 |
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| container_issue | 10 |
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| container_title | Nano research |
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| creator | Yang, Rong Wu, Shuang Wang, Duoming Xie, Guibai Cheng, Meng Wang, Guole Yang, Wei Chen, Peng Shi, Dongxia Zhang, Guangyu |
| description | All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature （RT） between a bilayer graphene channel and a multilayer graphene electrode can be as low as -5 Ω.·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits. |
| doi_str_mv | 10.1007/s12274-014-0504-1 |
| format | Article |
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Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature （RT） between a bilayer graphene channel and a multilayer graphene electrode can be as low as -5 Ω.·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.</description><identifier>ISSN: 1998-0124</identifier><identifier>EISSN: 1998-0000</identifier><identifier>DOI: 10.1007/s12274-014-0504-1</identifier><language>eng</language><publisher>Heidelberg: Tsinghua University Press</publisher><subject>Atomic/Molecular Structure and Spectra ; Biomedicine ; Biotechnology ; Channels ; Chemistry and Materials Science ; Circuits ; Condensed Matter Physics ; Contact ; Defects ; Devices ; Electrodes ; Fabrication ; Graphene ; Hydrogen ; Materials Science ; Metals ; Microscopy ; Multilayers ; Nanotechnology ; Plasma etching ; Research Article ; Spectrum analysis ; Strategy ; 制备 ; 制造策略 ; 各向异性 ; 器件 ; 接触电阻 ; 石墨 ; 质量 ; 集成电路</subject><ispartof>Nano research, 2014-10, Vol.7 (10), p.1449-1456</ispartof><rights>Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c409t-eabff79258d94f78cfb69d2a226eec57587847db65c0cc618685a284fdf80ac13</citedby><cites>FETCH-LOGICAL-c409t-eabff79258d94f78cfb69d2a226eec57587847db65c0cc618685a284fdf80ac13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/71233X/71233X.jpg</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12274-014-0504-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12274-014-0504-1$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,777,781,27905,27906,41469,42538,51300</link.rule.ids></links><search><creatorcontrib>Yang, Rong</creatorcontrib><creatorcontrib>Wu, Shuang</creatorcontrib><creatorcontrib>Wang, Duoming</creatorcontrib><creatorcontrib>Xie, Guibai</creatorcontrib><creatorcontrib>Cheng, Meng</creatorcontrib><creatorcontrib>Wang, Guole</creatorcontrib><creatorcontrib>Yang, Wei</creatorcontrib><creatorcontrib>Chen, Peng</creatorcontrib><creatorcontrib>Shi, Dongxia</creatorcontrib><creatorcontrib>Zhang, Guangyu</creatorcontrib><title>Fabrication of high-quality all-graphene devices with low contact resistances</title><title>Nano research</title><addtitle>Nano Res</addtitle><addtitle>Nano Research</addtitle><description>All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature （RT） between a bilayer graphene channel and a multilayer graphene electrode can be as low as -5 Ω.·μm, the lowest ever achieved experimentally. 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Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature （RT） between a bilayer graphene channel and a multilayer graphene electrode can be as low as -5 Ω.·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.</abstract><cop>Heidelberg</cop><pub>Tsinghua University Press</pub><doi>10.1007/s12274-014-0504-1</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1998-0124 |
| ispartof | Nano research, 2014-10, Vol.7 (10), p.1449-1456 |
| issn | 1998-0124 1998-0000 |
| language | eng |
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| subjects | Atomic/Molecular Structure and Spectra Biomedicine Biotechnology Channels Chemistry and Materials Science Circuits Condensed Matter Physics Contact Defects Devices Electrodes Fabrication Graphene Hydrogen Materials Science Metals Microscopy Multilayers Nanotechnology Plasma etching Research Article Spectrum analysis Strategy 制备 制造策略 各向异性 器件 接触电阻 石墨 质量 集成电路 |
| title | Fabrication of high-quality all-graphene devices with low contact resistances |
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