Intrinsically low-resistance carbon nanotube-metal contacts mediated by topological defects
Applying a first-principles computational approach, we study the electronic and charge transport properties of the interfaces between metals and capped carbon nanotubes (CNTs) with various arrangements of topological defects. Observing the length scaling of resistance, we first show that capped CNTs...
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| Veröffentlicht in: | MRS communications 2012-09, Vol.2 (3), p.91-96 |
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| creator | Kim, Han Seul Lee, Ga In Kim, Hu Sung Kang, Jeung Ku Kim, Yong-Hoon |
| description | Applying a first-principles computational approach, we study the electronic and charge transport properties of the interfaces between metals and capped carbon nanotubes (CNTs) with various arrangements of topological defects. Observing the length scaling of resistance, we first show that capped CNTs exhibit only one CNT-body-determined low-slope scaling and the resulting very low long-length-limit resistance. The intrinsically low resistance (absence of Schottky-barrier-dominated high-slope scaling) of capped CNTs is next analyzed by the local density of states, which shows the formation of unusual propagating-type metal-induced gap states originating from the topological defect states that are well connected with CNT edge and body states. |
| doi_str_mv | 10.1557/mrc.2012.14 |
| format | Article |
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| source | SpringerLink Journals - AutoHoldings; Cambridge University Press Journals Complete |
| subjects | Biomaterials Characterization and Evaluation of Materials Materials Engineering Materials Science Nanotechnology Polymer Sciences Research Letters |
| title | Intrinsically low-resistance carbon nanotube-metal contacts mediated by topological defects |
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