Thickness optimization of Mo films for Cu(InGa)Se2 solar cell applications

Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 Delta *mm to 1.5 Delta *mm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films...

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Veröffentlicht in:	Chinese physics B 2011-06, Vol.20 (6), p.068102-jQuery1323923676442='49'
Hauptverfasser:	Li, Wei (微李), Zhao, Yan-Min (彦民赵), Liu, Xing-Jiang (兴江刘), Ao, Jian-Ping (建平敖), Sun, Yun (云孙)
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Sprache:	eng
Schlagworte:	APPLICATIONS COPPER INDIUM SELENIDE COPPER SELENIDE DEPOSITION Film growth Film thickness Optimization Photovoltaic cells RESIDUAL STRESS SOLAR CELLS STRESS Stresses THIN FILMS
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creator	Li, Wei (微李) Zhao, Yan-Min (彦民赵) Liu, Xing-Jiang (兴江刘) Ao, Jian-Ping (建平敖) Sun, Yun (云孙)
description	Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 Delta mm to 1.5 Delta mm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 Delta *mm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%.
doi_str_mv	10.1088/1674-1056/20/6/068102
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subjects	APPLICATIONS COPPER INDIUM SELENIDE COPPER SELENIDE DEPOSITION Film growth Film thickness Optimization Photovoltaic cells RESIDUAL STRESS SOLAR CELLS STRESS Stresses THIN FILMS
title	Thickness optimization of Mo films for Cu(InGa)Se2 solar cell applications
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