Top contact organic field effect transistors fabricated using a photolithographic process
This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to f...
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| Veröffentlicht in: | Chinese physics B 2011-08, Vol.20 (8), p.389-393, Article 087306 |
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| container_end_page | 393 |
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| container_issue | 8 |
| container_start_page | 389 |
| container_title | Chinese physics B |
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| creator | Wang, Hong Ji, Zhuo-Yu Shang, Li-Wei Liu, Xing-Hua Peng, Ying-Quan Liu, Ming |
| description | This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated suc- cessfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process. |
| doi_str_mv | 10.1088/1674-1056/20/8/087306 |
| format | Article |
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The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated suc- cessfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>DOI: 10.1088/1674-1056/20/8/087306</identifier><language>eng</language><subject>Contact ; Electrodes ; Etching ; Field effect transistors ; Passivation ; Photolithography ; Semiconductor devices ; Semiconductors ; 光刻工艺 ; 半导体层 ; 工艺制造 ; 有机场效应晶体管 ; 级联 ; 荫罩 ; 蚀刻工艺 ; 钝化层</subject><ispartof>Chinese physics B, 2011-08, Vol.20 (8), p.389-393, Article 087306</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c345t-fb6556f29435a263a1da449e2d402402d1d7e9fabb6252ef50d6d1c2f66d42d3</citedby><cites>FETCH-LOGICAL-c345t-fb6556f29435a263a1da449e2d402402d1d7e9fabb6252ef50d6d1c2f66d42d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Wang, Hong</creatorcontrib><creatorcontrib>Ji, Zhuo-Yu</creatorcontrib><creatorcontrib>Shang, Li-Wei</creatorcontrib><creatorcontrib>Liu, Xing-Hua</creatorcontrib><creatorcontrib>Peng, Ying-Quan</creatorcontrib><creatorcontrib>Liu, Ming</creatorcontrib><title>Top contact organic field effect transistors fabricated using a photolithographic process</title><title>Chinese physics B</title><addtitle>Chinese Physics</addtitle><description>This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated suc- cessfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.</description><subject>Contact</subject><subject>Electrodes</subject><subject>Etching</subject><subject>Field effect transistors</subject><subject>Passivation</subject><subject>Photolithography</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>光刻工艺</subject><subject>半导体层</subject><subject>工艺制造</subject><subject>有机场效应晶体管</subject><subject>级联</subject><subject>荫罩</subject><subject>蚀刻工艺</subject><subject>钝化层</subject><issn>1674-1056</issn><issn>2058-3834</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkMtKAzEUhoMoWKuPIIw7N-PkPhlcSfEGBTfduAppLm1kOpkm6cK3N6WlCzeFwIHw_efnfADcI_iEoBAN4i2tEWS8wbARDRQtgfwCTDBkoiaC0EswOTHX4CalHwg5gphMwPcijJUOQ1Y6VyGu1OB15bztTWWds-UzRzUkn3KIqXJqGb1W2Zpql_ywqlQ1rkMOvc_rsIpqXJf0GIO2Kd2CK6f6ZO-OcwoWb6-L2Uc9_3r_nL3Ma00oy7Vbcsa4wx0lTGFOFDKK0s5iQyEuzyDT2q4ULzlm2DoGDTdIY8e5odiQKXg8rC21251NWW580rbv1WDDLknUtqKc3WFxHoVFZ9dhhgrKDqiOIaVonRyj36j4WyC5ly73QuVeqMRQCnmQXnLP_3LaZ5V9ERyV78-mH47pdRhW2yL4VEtEB3lHGfkDHqiTfA</recordid><startdate>20110801</startdate><enddate>20110801</enddate><creator>Wang, Hong</creator><creator>Ji, Zhuo-Yu</creator><creator>Shang, Li-Wei</creator><creator>Liu, Xing-Hua</creator><creator>Peng, Ying-Quan</creator><creator>Liu, Ming</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20110801</creationdate><title>Top contact organic field effect transistors fabricated using a photolithographic process</title><author>Wang, Hong ; Ji, Zhuo-Yu ; Shang, Li-Wei ; Liu, Xing-Hua ; Peng, Ying-Quan ; Liu, Ming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c345t-fb6556f29435a263a1da449e2d402402d1d7e9fabb6252ef50d6d1c2f66d42d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Contact</topic><topic>Electrodes</topic><topic>Etching</topic><topic>Field effect transistors</topic><topic>Passivation</topic><topic>Photolithography</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>光刻工艺</topic><topic>半导体层</topic><topic>工艺制造</topic><topic>有机场效应晶体管</topic><topic>级联</topic><topic>荫罩</topic><topic>蚀刻工艺</topic><topic>钝化层</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Hong</creatorcontrib><creatorcontrib>Ji, Zhuo-Yu</creatorcontrib><creatorcontrib>Shang, Li-Wei</creatorcontrib><creatorcontrib>Liu, Xing-Hua</creatorcontrib><creatorcontrib>Peng, Ying-Quan</creatorcontrib><creatorcontrib>Liu, Ming</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Hong</au><au>Ji, Zhuo-Yu</au><au>Shang, Li-Wei</au><au>Liu, Xing-Hua</au><au>Peng, Ying-Quan</au><au>Liu, Ming</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Top contact organic field effect transistors fabricated using a photolithographic process</atitle><jtitle>Chinese physics B</jtitle><addtitle>Chinese Physics</addtitle><date>2011-08-01</date><risdate>2011</risdate><volume>20</volume><issue>8</issue><spage>389</spage><epage>393</epage><pages>389-393</pages><artnum>087306</artnum><issn>1674-1056</issn><eissn>2058-3834</eissn><abstract>This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. 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| ispartof | Chinese physics B, 2011-08, Vol.20 (8), p.389-393, Article 087306 |
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| source | IOP Publishing Journals |
| subjects | Contact Electrodes Etching Field effect transistors Passivation Photolithography Semiconductor devices Semiconductors 光刻工艺 半导体层 工艺制造 有机场效应晶体管 级联 荫罩 蚀刻工艺 钝化层 |
| title | Top contact organic field effect transistors fabricated using a photolithographic process |
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