Growth of Au-doped Hg(1-x)Cd(x)Te epitaxial crystals and its Raman spectrum

Au-doped Hg(1-x)Cd(x) Te epitaxial layers were grown by vapor phase epitaxial method. The electrical properties of Hg(1-x)Cd(x)Te epitaxial layers were investigated by Hall measurement. Profile of Au in Hg(1-x)Cd(x) Te epitaxial layers was revealed by Secondary ion mass spectroscopy (SIMS) method. H...

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Veröffentlicht in:	Hong wai yu hao mi bo xue bao 2015-08, Vol.34 (4), p.432-436
Hauptverfasser:	Wang, Reng, Jiao, Cui-Ling, Xu, Guo-Qing, Zhagn, Li-Ping, Zhang, Ke-Feng, Ye, Lu, Du, Yun-Chen, Shao, Xiu-Hua, Lin, Xing-Cao, Li, Xiang-Yang
Format:	Artikel
Sprache:	chi
Schlagworte:	Crystals Electrical properties Electron mobility Epitaxial growth Epitaxial layers Hall effect Infrared Secondary ion mass spectroscopy
Online-Zugang:	Volltext
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