A VLSI Circuit Emulation of Chemical Synaptic Transmission Dynamics and Postsynaptic DNA Transcription
Chemical synaptic transmission dynamics in the mammalian wetware control the activities of a living creature. During this cascading process, biological information is transferred from one neuron to another (the next) neuron. Many electronic circuits have been designed to implement neural synaptic co...
Gespeichert in:
Veröffentlicht in: | IEEE transactions on very large scale integration (VLSI) systems 2016-02, Vol.24 (2), p.678-691 |
---|---|
Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Chemical synaptic transmission dynamics in the mammalian wetware control the activities of a living creature. During this cascading process, biological information is transferred from one neuron to another (the next) neuron. Many electronic circuits have been designed to implement neural synaptic communication; however, the invention of the memristor has raised the prospect of novel, highly efficient, and miniaturized neural circuit emulation. A novel VLSI circuit emulation of the chemical synaptic process at the biomolecular level (molecular level neuromorphic circuit) has been presented in this paper. Memristors and operational amplifiers in various configurations are key components in this silicon-based emulation. Commencement of deoxyribonucleic acid (DNA) transcription of certain neural gene in the postsynaptic neuron (through Ca +2 ion stimulation) is a major consequence of the synaptic transmission dynamics. Thus, this paper also proposes an integrated circuit model for the postsynaptic neural DNA transcription. A comparison of the silicon-based measured results using the proposed model with experimentally reported biological data justifies the validity of the proposed model. Stochastic aspects are also simulated through Monte Carlo analysis of the circuit model. |
---|---|
ISSN: | 1063-8210 1557-9999 |
DOI: | 10.1109/TVLSI.2015.2416350 |