First-principles studies on molecular beam epitaxy growth of GaA s sub(1-x) Bi sub(x)

We investigate the molecular beam epitaxy (MBE) growth of GaA s sub(1-x) Bi sub(x) film using density functional theory with spin-orbit coupling to understand the growth of this film, especially the mechanisms of Bi incorporation. We study the stable adsorption structures and kinetics of the inciden...

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Veröffentlicht in:	Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-07, Vol.92 (3)
Hauptverfasser:	Luo, Guangfu, Yang, Shujiang, Li, Jincheng, Arjmand, Mehrdad, Szlufarska, Izabela, Brown, April S, Kuech, Thomas F, Morgan, Dane
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic structure Condensed matter Exchange Fluxes Gallium arsenides Molecular beam epitaxy Molecular structure Surface chemistry
Online-Zugang:	Volltext
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