SiGe crystal growth aboard the international space station

A silicon germanium mixed crystal Si1−xGex (x~0.5) 10mm in diameter and 9.2mm in length was grown by the traveling liquidus-zone (TLZ) method in microgravity by suppressing convection in a melt. Ge concentration of 49.8±2.5 at% has been established for the whole of the grown crystal. Compared with t...

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Veröffentlicht in:	Journal of crystal growth 2015-05, Vol.417, p.31-36
Hauptverfasser:	Kinoshita, K., Arai, Y., Tsukada, T., Inatomi, Y., Miyata, H., Tanaka, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Convection A1. Diffusion A2. Growth from solution A2. Travelling solvent zone growth B1. Germanium silicon alloys Convection Crystal growth Crystal structure Germanium Mixed crystals Retarding Silicon germanides Variability
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