Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures
We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms. By analyzing data from 26 different heterostructures, we observe a strong correlation between the backgrou...
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| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-07, Vol.92 (3), Article 035304 |
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| container_title | Physical review. B, Condensed matter and materials physics |
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| creator | Mi, X. Hazard, T. M. Payette, C. Wang, K. Zajac, D. M. Cady, J. V. Petta, J. R. |
| description | We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms. By analyzing data from 26 different heterostructures, we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest-quality wafer supports a 2DEG with mobility mu = 160 000 cm super(2)/Vs at a density n = 2.17 x 10 super(11)/cm super(2) and exhibits a metal-to-insulator transition at a critical density n sub(c)= 0.46 x 10 super(11)/cm super(2). We extract a valley splitting Delta sub()v~ 150 mu eV at a magnetic field B = 1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots. |
| doi_str_mv | 10.1103/PhysRevB.92.035304 |
| format | Article |
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M. ; Payette, C. ; Wang, K. ; Zajac, D. M. ; Cady, J. V. ; Petta, J. R.</creator><creatorcontrib>Mi, X. ; Hazard, T. M. ; Payette, C. ; Wang, K. ; Zajac, D. M. ; Cady, J. V. ; Petta, J. R.</creatorcontrib><description>We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms. By analyzing data from 26 different heterostructures, we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest-quality wafer supports a 2DEG with mobility mu = 160 000 cm super(2)/Vs at a density n = 2.17 x 10 super(11)/cm super(2) and exhibits a metal-to-insulator transition at a critical density n sub(c)= 0.46 x 10 super(11)/cm super(2). We extract a valley splitting Delta sub()v~ 150 mu eV at a magnetic field B = 1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.</description><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/PhysRevB.92.035304</identifier><language>eng</language><subject>Condensed matter ; Constraining ; Density ; Electron mobility ; Heterostructures ; Magnetic fields ; Silicon ; Silicon germanides</subject><ispartof>Physical review. 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R.</creatorcontrib><title>Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures</title><title>Physical review. B, Condensed matter and materials physics</title><description>We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms. By analyzing data from 26 different heterostructures, we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest-quality wafer supports a 2DEG with mobility mu = 160 000 cm super(2)/Vs at a density n = 2.17 x 10 super(11)/cm super(2) and exhibits a metal-to-insulator transition at a critical density n sub(c)= 0.46 x 10 super(11)/cm super(2). We extract a valley splitting Delta sub()v~ 150 mu eV at a magnetic field B = 1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.</description><subject>Condensed matter</subject><subject>Constraining</subject><subject>Density</subject><subject>Electron mobility</subject><subject>Heterostructures</subject><subject>Magnetic fields</subject><subject>Silicon</subject><subject>Silicon germanides</subject><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo1kE1LAzEURQdRsFb_gKss3Uz7MklmJkstWoWKYhVcCCFN3rSR-TLJCP33jlRX9y4uh8tJkksKM0qBzZ93-_CC3zczmc2ACQb8KJlQISDNmHg_HjvIMgWa0dPkLIRPAMolzybJx6Pethi76HUb-s5HEuJgHQbSVaTpNq52cU9q17jo2i1p0Ox060ITiGvJ0NquR0vWbr52SyQ7jOi7EP1g4uAxnCcnla4DXvzlNHm7u31d3Kerp-XD4nqVGs5kTBGtQSgZgCm5KPKiqPJNJlhRSqRguRUVlYZiCZkuhECJWmsjrLRocg6WTZOrA7f33deAIarGBYN1rVvshqBoUQDL-cgep9lhasajwWOleu8a7feKgvpVqf5VKpmpg0r2A7Kma5Q</recordid><startdate>20150716</startdate><enddate>20150716</enddate><creator>Mi, X.</creator><creator>Hazard, T. 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B, Condensed matter and materials physics</jtitle><date>2015-07-16</date><risdate>2015</risdate><volume>92</volume><issue>3</issue><artnum>035304</artnum><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms. By analyzing data from 26 different heterostructures, we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest-quality wafer supports a 2DEG with mobility mu = 160 000 cm super(2)/Vs at a density n = 2.17 x 10 super(11)/cm super(2) and exhibits a metal-to-insulator transition at a critical density n sub(c)= 0.46 x 10 super(11)/cm super(2). We extract a valley splitting Delta sub()v~ 150 mu eV at a magnetic field B = 1.8 T. 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| ispartof | Physical review. B, Condensed matter and materials physics, 2015-07, Vol.92 (3), Article 035304 |
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| source | APS_美国物理学会期刊 |
| subjects | Condensed matter Constraining Density Electron mobility Heterostructures Magnetic fields Silicon Silicon germanides |
| title | Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures |
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