Defects as qubits in 3C- and 4H-SiC

We employ hybrid density functional calculations to search for defects in different polytypes of SiC that may serve as qubits for quantum computing. We explore the divacancy in 4H- and 3C-SiC, consisting of a carbon vacancy adjacent to a silicon vacancy, and the nitrogen-vacancy (NV) center in 3C-Si...

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Veröffentlicht in:	Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-07, Vol.92 (4)
Hauptverfasser:	Gordon, L, Janotti, A, Van de Walle, C G
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter Defects Density Divacancies Mathematical analysis Qubits (quantum computing) Silicon Vacancies
Online-Zugang:	Volltext
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