Hole-ion Mixed Conduction of Orientation-Controlled BaPrO sub( 3- delta ) Thin Film with Mixed Valence States

An in-plane-oriented BaPrO... thin film with mixed valence states has been prepared on an Al...O...(0001) substrate by RF magnetron sputtering. With increasing crystallization temperature (T...), the lattice constant decreases and the orientation changes from the a-axis to the b-axis. The thin film...

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Veröffentlicht in:	Journal of the Physical Society of Japan 2015-11, Vol.84 (11), p.1-1
Hauptverfasser:	Higuchi, Tohru, Oda, Asuka, Tsuchiya, Takashi, Suetsugu, Takaaki, Suzuki, Naoya, Yamaguchi, Shohei, Minohara, Makoto, Kobayashi, Masaki, Horiba, Koji, Kumigashira, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Ceramics Crystallization Lattice parameters Orientation Partial pressure Symbols Thin films Valence band
Online-Zugang:	Volltext
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