Hole-ion Mixed Conduction of Orientation-Controlled BaPrO sub( 3- delta ) Thin Film with Mixed Valence States
An in-plane-oriented BaPrO... thin film with mixed valence states has been prepared on an Al...O...(0001) substrate by RF magnetron sputtering. With increasing crystallization temperature (T...), the lattice constant decreases and the orientation changes from the a-axis to the b-axis. The thin film...
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| Veröffentlicht in: | Journal of the Physical Society of Japan 2015-11, Vol.84 (11), p.1-1 |
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| container_title | Journal of the Physical Society of Japan |
| container_volume | 84 |
| creator | Higuchi, Tohru Oda, Asuka Tsuchiya, Takashi Suetsugu, Takaaki Suzuki, Naoya Yamaguchi, Shohei Minohara, Makoto Kobayashi, Masaki Horiba, Koji Kumigashira, Hiroshi |
| description | An in-plane-oriented BaPrO... thin film with mixed valence states has been prepared on an Al...O...(0001) substrate by RF magnetron sputtering. With increasing crystallization temperature (T...), the lattice constant decreases and the orientation changes from the a-axis to the b-axis. The thin film prepared above T... = 800 ...C exhibits a higher proton conductivity than bulk ceramics. The conductivity below 400 ...C decreases with oxygen gas partial pressure, indicating the existence of hole-ion mixed conduction. The valence band consists of O 2p states hybridized with the Pr... (4f...) and Pr... (4f...L) states, which are closely related to the mixed conduction. The energy difference between the top of the valence band and the Fermi level corresponds to the activation energy of holes for the total conductivity below 400 ...C. (ProQuest: ... denotes formulae/symbols omitted.) |
| format | Article |
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With increasing crystallization temperature (T...), the lattice constant decreases and the orientation changes from the a-axis to the b-axis. The thin film prepared above T... = 800 ...C exhibits a higher proton conductivity than bulk ceramics. The conductivity below 400 ...C decreases with oxygen gas partial pressure, indicating the existence of hole-ion mixed conduction. The valence band consists of O 2p states hybridized with the Pr... (4f...) and Pr... (4f...L) states, which are closely related to the mixed conduction. The energy difference between the top of the valence band and the Fermi level corresponds to the activation energy of holes for the total conductivity below 400 ...C. 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With increasing crystallization temperature (T...), the lattice constant decreases and the orientation changes from the a-axis to the b-axis. The thin film prepared above T... = 800 ...C exhibits a higher proton conductivity than bulk ceramics. The conductivity below 400 ...C decreases with oxygen gas partial pressure, indicating the existence of hole-ion mixed conduction. The valence band consists of O 2p states hybridized with the Pr... (4f...) and Pr... (4f...L) states, which are closely related to the mixed conduction. The energy difference between the top of the valence band and the Fermi level corresponds to the activation energy of holes for the total conductivity below 400 ...C. 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With increasing crystallization temperature (T...), the lattice constant decreases and the orientation changes from the a-axis to the b-axis. The thin film prepared above T... = 800 ...C exhibits a higher proton conductivity than bulk ceramics. The conductivity below 400 ...C decreases with oxygen gas partial pressure, indicating the existence of hole-ion mixed conduction. The valence band consists of O 2p states hybridized with the Pr... (4f...) and Pr... (4f...L) states, which are closely related to the mixed conduction. The energy difference between the top of the valence band and the Fermi level corresponds to the activation energy of holes for the total conductivity below 400 ...C. (ProQuest: ... denotes formulae/symbols omitted.)</abstract></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0031-9015 |
| ispartof | Journal of the Physical Society of Japan, 2015-11, Vol.84 (11), p.1-1 |
| issn | 0031-9015 1347-4073 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1770360617 |
| source | Alma/SFX Local Collection |
| subjects | Ceramics Crystallization Lattice parameters Orientation Partial pressure Symbols Thin films Valence band |
| title | Hole-ion Mixed Conduction of Orientation-Controlled BaPrO sub( 3- delta ) Thin Film with Mixed Valence States |
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