Characterization and Modeling of 1/ f Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides
In this paper, the volume trap densities Nt are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting Nt , the drain-current power spectral densities were measured from a large number of id...
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| Veröffentlicht in: | IEEE transactions on nanotechnology 2011-05, Vol.10 (3), p.417-423 |
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| container_title | IEEE transactions on nanotechnology |
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| creator | Rock-Hyun Baek Chang-Ki Baek Hyun-Sik Choi Jeong-Soo Lee Yun Young Yeoh Kyoung Hwan Yeo Dong-Won Kim Kinam Kim Kim, D M Yoon-Ha Jeong |
| description | In this paper, the volume trap densities Nt are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting Nt , the drain-current power spectral densities were measured from a large number of identical devices and averaged over, thereby mimicking the spatial distribution of trap sites inducing 1/ f curve. Also, effective mobility and threshold voltage were simultaneously extracted with the series resistance to characterize the 1/ f noise in terms of intrinsic values of these two channel parameters. The volume trap densities thus extracted from different oxides (in situ steam-generated oxide/rapid thermal oxide/nitride-gated oxide) are compared and further examined using hot-carrier stress data. Finally, radius dependence of the cylindrical 1/ f model developed is discussed. |
| doi_str_mv | 10.1109/TNANO.2010.2044188 |
| format | Article |
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For extracting Nt , the drain-current power spectral densities were measured from a large number of identical devices and averaged over, thereby mimicking the spatial distribution of trap sites inducing 1/ f curve. Also, effective mobility and threshold voltage were simultaneously extracted with the series resistance to characterize the 1/ f noise in terms of intrinsic values of these two channel parameters. The volume trap densities thus extracted from different oxides (in situ steam-generated oxide/rapid thermal oxide/nitride-gated oxide) are compared and further examined using hot-carrier stress data. Finally, radius dependence of the cylindrical 1/ f model developed is discussed.</description><identifier>ISSN: 1536-125X</identifier><identifier>EISSN: 1941-0085</identifier><identifier>DOI: 10.1109/TNANO.2010.2044188</identifier><identifier>CODEN: ITNECU</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>1/ f ; 1f noise ; Applied sciences ; Channels ; Cross-disciplinary physics: materials science; rheology ; Current measurement ; Data mining ; Density ; Density measurement ; Electrical resistance measurement ; Electronics ; Exact sciences and technology ; FETs ; Flicker ; Flicker noise ; gate-all-around (GAA) FET ; Geometry ; Materials science ; Nanoscale materials and structures: fabrication and characterization ; Nanotechnology ; Nanowires ; Noise ; Oxides ; Physics ; Power measurement ; quantum wire ; Quantum wires ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; series resistance R_{sd} ; Solid modeling ; Spatial distribution ; Spectra ; Threshold voltage ; Transistors ; twin silicon nanowire FET (TSNWFET)</subject><ispartof>IEEE transactions on nanotechnology, 2011-05, Vol.10 (3), p.417-423</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c362t-2d65f543bb64efe6c2d5c5645a6ee7d6a500e7c34da70d532a6ee15f2f40e2873</citedby><cites>FETCH-LOGICAL-c362t-2d65f543bb64efe6c2d5c5645a6ee7d6a500e7c34da70d532a6ee15f2f40e2873</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5422646$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5422646$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24186868$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Rock-Hyun Baek</creatorcontrib><creatorcontrib>Chang-Ki Baek</creatorcontrib><creatorcontrib>Hyun-Sik Choi</creatorcontrib><creatorcontrib>Jeong-Soo Lee</creatorcontrib><creatorcontrib>Yun Young Yeoh</creatorcontrib><creatorcontrib>Kyoung Hwan Yeo</creatorcontrib><creatorcontrib>Dong-Won Kim</creatorcontrib><creatorcontrib>Kinam Kim</creatorcontrib><creatorcontrib>Kim, D M</creatorcontrib><creatorcontrib>Yoon-Ha Jeong</creatorcontrib><title>Characterization and Modeling of 1/ f Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides</title><title>IEEE transactions on nanotechnology</title><addtitle>TNANO</addtitle><description>In this paper, the volume trap densities Nt are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting Nt , the drain-current power spectral densities were measured from a large number of identical devices and averaged over, thereby mimicking the spatial distribution of trap sites inducing 1/ f curve. Also, effective mobility and threshold voltage were simultaneously extracted with the series resistance to characterize the 1/ f noise in terms of intrinsic values of these two channel parameters. The volume trap densities thus extracted from different oxides (in situ steam-generated oxide/rapid thermal oxide/nitride-gated oxide) are compared and further examined using hot-carrier stress data. Finally, radius dependence of the cylindrical 1/ f model developed is discussed.</description><subject>1/ f</subject><subject>1f noise</subject><subject>Applied sciences</subject><subject>Channels</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Current measurement</subject><subject>Data mining</subject><subject>Density</subject><subject>Density measurement</subject><subject>Electrical resistance measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Flicker</subject><subject>Flicker noise</subject><subject>gate-all-around (GAA) FET</subject><subject>Geometry</subject><subject>Materials science</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanotechnology</subject><subject>Nanowires</subject><subject>Noise</subject><subject>Oxides</subject><subject>Physics</subject><subject>Power measurement</subject><subject>quantum wire</subject><subject>Quantum wires</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>series resistance R_{sd}</subject><subject>Solid modeling</subject><subject>Spatial distribution</subject><subject>Spectra</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>twin silicon nanowire FET (TSNWFET)</subject><issn>1536-125X</issn><issn>1941-0085</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU8vBDEYhydCguULcOlFuIzt_5l1k8WSsCtB4jbptm-pzLa0I6yrL65rN47SQ_u2z-859FcUewQfE4IH_fvx6XhyTHGeKeac1PVasUUGnJQY12I9nwWTJaHicbPYTukFY1JJUW8V38NnFZXuILov1bngkfIG3QQDrfNPKFhE-siicXAJkPPozpVe-fDhIqCL8_t0gs6tBd2lBTqc55CJTqsWjSDMoIvzX9-Zy1AE36HbGDSktHJPPp2BtFNsWNUm2F3tveIhq4eX5fVkdDU8vS41k7QrqZHCCs6mU8nBgtTUCC0kF0oCVEYqgTFUmnGjKmwEo4t7Iiy1HAOtK9YrDpfe1xje3iF1zcwlDW2rPIT31NQ1llJWnGXy6F-SVBVmopZskFG6RHUMKUWwzWt0MxXnDcHNopvmt5tm0U2z6iaHDlZ-lfJn2ai8dukvSTMk88rc_pJzAPD3LDilkkv2A0XmmB8</recordid><startdate>20110501</startdate><enddate>20110501</enddate><creator>Rock-Hyun Baek</creator><creator>Chang-Ki Baek</creator><creator>Hyun-Sik Choi</creator><creator>Jeong-Soo Lee</creator><creator>Yun Young Yeoh</creator><creator>Kyoung Hwan Yeo</creator><creator>Dong-Won Kim</creator><creator>Kinam Kim</creator><creator>Kim, D M</creator><creator>Yoon-Ha Jeong</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110501</creationdate><title>Characterization and Modeling of 1/ f Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides</title><author>Rock-Hyun Baek ; Chang-Ki Baek ; Hyun-Sik Choi ; Jeong-Soo Lee ; Yun Young Yeoh ; Kyoung Hwan Yeo ; Dong-Won Kim ; Kinam Kim ; Kim, D M ; Yoon-Ha Jeong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c362t-2d65f543bb64efe6c2d5c5645a6ee7d6a500e7c34da70d532a6ee15f2f40e2873</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>1/ f</topic><topic>1f noise</topic><topic>Applied sciences</topic><topic>Channels</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Current measurement</topic><topic>Data mining</topic><topic>Density</topic><topic>Density measurement</topic><topic>Electrical resistance measurement</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>Flicker</topic><topic>Flicker noise</topic><topic>gate-all-around (GAA) FET</topic><topic>Geometry</topic><topic>Materials science</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanotechnology</topic><topic>Nanowires</topic><topic>Noise</topic><topic>Oxides</topic><topic>Physics</topic><topic>Power measurement</topic><topic>quantum wire</topic><topic>Quantum wires</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>series resistance R_{sd}</topic><topic>Solid modeling</topic><topic>Spatial distribution</topic><topic>Spectra</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>twin silicon nanowire FET (TSNWFET)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rock-Hyun Baek</creatorcontrib><creatorcontrib>Chang-Ki Baek</creatorcontrib><creatorcontrib>Hyun-Sik Choi</creatorcontrib><creatorcontrib>Jeong-Soo Lee</creatorcontrib><creatorcontrib>Yun Young Yeoh</creatorcontrib><creatorcontrib>Kyoung Hwan Yeo</creatorcontrib><creatorcontrib>Dong-Won Kim</creatorcontrib><creatorcontrib>Kinam Kim</creatorcontrib><creatorcontrib>Kim, D M</creatorcontrib><creatorcontrib>Yoon-Ha Jeong</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rock-Hyun Baek</au><au>Chang-Ki Baek</au><au>Hyun-Sik Choi</au><au>Jeong-Soo Lee</au><au>Yun Young Yeoh</au><au>Kyoung Hwan Yeo</au><au>Dong-Won Kim</au><au>Kinam Kim</au><au>Kim, D M</au><au>Yoon-Ha Jeong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization and Modeling of 1/ f Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides</atitle><jtitle>IEEE transactions on nanotechnology</jtitle><stitle>TNANO</stitle><date>2011-05-01</date><risdate>2011</risdate><volume>10</volume><issue>3</issue><spage>417</spage><epage>423</epage><pages>417-423</pages><issn>1536-125X</issn><eissn>1941-0085</eissn><coden>ITNECU</coden><abstract>In this paper, the volume trap densities Nt are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting Nt , the drain-current power spectral densities were measured from a large number of identical devices and averaged over, thereby mimicking the spatial distribution of trap sites inducing 1/ f curve. Also, effective mobility and threshold voltage were simultaneously extracted with the series resistance to characterize the 1/ f noise in terms of intrinsic values of these two channel parameters. The volume trap densities thus extracted from different oxides (in situ steam-generated oxide/rapid thermal oxide/nitride-gated oxide) are compared and further examined using hot-carrier stress data. Finally, radius dependence of the cylindrical 1/ f model developed is discussed.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TNANO.2010.2044188</doi><tpages>7</tpages></addata></record> |
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| subjects | 1/ f 1f noise Applied sciences Channels Cross-disciplinary physics: materials science rheology Current measurement Data mining Density Density measurement Electrical resistance measurement Electronics Exact sciences and technology FETs Flicker Flicker noise gate-all-around (GAA) FET Geometry Materials science Nanoscale materials and structures: fabrication and characterization Nanotechnology Nanowires Noise Oxides Physics Power measurement quantum wire Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices series resistance R_{sd} Solid modeling Spatial distribution Spectra Threshold voltage Transistors twin silicon nanowire FET (TSNWFET) |
| title | Characterization and Modeling of 1/ f Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides |
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