Formation of multiple dislocations in Si solid-phase epitaxy regrowth process using stress memorization technique

[Display omitted] •Provide formation mechanism of stress-memorization-technique induced edge-dislocation by molecular dynamic simulation.•Explain the line defect formation mechanism and defect types.•Validate simulation results and defect types by high-resolution transmission electron microscopy and...

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Veröffentlicht in:	Computational materials science 2015-06, Vol.104, p.219-224
Hauptverfasser:	Shen, T.M., Wang, S.J., Tung, Y.T., Hwang, R.L., Wu, C.C., Wu, Jeff, Diaz, Carlos H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic structure Computer simulation Defects Dislocation Dislocations Epitaxy Molecular dynamics (MD) simulation Planes Solid-phase epitaxy regrowth Stacking faults Stress memorization technique (SMT) Stresses
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