Electron mobility in heavily doped junctionless nanowire SOI MOSFETs

•Mobility in highly doped junctionless trigate MOSFETs is experimentally studied.•Mobility enhancement in narrow nanowire versus wide devices is demonstrated.•Mobility values in narrow nanowire MOSFETs exceed the bulk mobility value.•These effects are due to reduced impurity scattering in narrow nan...

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Bibliographische Detailangaben

Veröffentlicht in:	Microelectronic engineering 2013-09, Vol.109, p.326-329
Hauptverfasser:	Rudenko, T., Nazarov, A., Yu, R., Barraud, S., Cherkaoui, K., Razavi, P., Fagas, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier mobility Devices Doping Electron mobility Film thickness Heavily doped MOSFET Junctionless MOSFET Mobility MOSFETs Multi-gate MOSFET Nanocomposites Nanomaterials Nanostructure Nanowires Silicon
Online-Zugang:	Volltext
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