Giant voltage modulation of magnetic anisotropy in strained heavy metal/magnet/insulator heterostructures
Ab initio electronic structure calculations reveal that epitaxial strain has a dramatic effect on the voltage-controlled magnetic anisotropy (VCMA) in Ta/FeCo/MgO junctions. Strain can give rise to a wide range of novel VCMA behaviors where the MA can change from a [and] to a [logicalor]-shape elect...
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| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-07, Vol.92 (2), Article 020407 |
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| container_title | Physical review. B, Condensed matter and materials physics |
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| creator | Ong, P. V. Kioussis, Nicholas Odkhuu, D. Khalili Amiri, P. Wang, K. L. Carman, Gregory P. |
| description | Ab initio electronic structure calculations reveal that epitaxial strain has a dramatic effect on the voltage-controlled magnetic anisotropy (VCMA) in Ta/FeCo/MgO junctions. Strain can give rise to a wide range of novel VCMA behaviors where the MA can change from a [and] to a [logicalor]-shape electric-field dependence with giant VCMA coefficients which are asymmetric under voltage reversal. The underlying mechanism is the interplay of the strain- and electric-field-induced changes in the spin-orbit coupled states d at the interfaces and the strain-induced modification of the dielectric constant of MgO. These findings demonstrate the feasibility of highly sensitive VCMA through strain engineering, which may provide a viable avenue for tailoring magnetoelectric properties for spintronic applications. |
| doi_str_mv | 10.1103/PhysRevB.92.020407 |
| format | Article |
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V. ; Kioussis, Nicholas ; Odkhuu, D. ; Khalili Amiri, P. ; Wang, K. L. ; Carman, Gregory P.</creator><creatorcontrib>Ong, P. V. ; Kioussis, Nicholas ; Odkhuu, D. ; Khalili Amiri, P. ; Wang, K. L. ; Carman, Gregory P.</creatorcontrib><description>Ab initio electronic structure calculations reveal that epitaxial strain has a dramatic effect on the voltage-controlled magnetic anisotropy (VCMA) in Ta/FeCo/MgO junctions. Strain can give rise to a wide range of novel VCMA behaviors where the MA can change from a [and] to a [logicalor]-shape electric-field dependence with giant VCMA coefficients which are asymmetric under voltage reversal. The underlying mechanism is the interplay of the strain- and electric-field-induced changes in the spin-orbit coupled states d at the interfaces and the strain-induced modification of the dielectric constant of MgO. These findings demonstrate the feasibility of highly sensitive VCMA through strain engineering, which may provide a viable avenue for tailoring magnetoelectric properties for spintronic applications.</description><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/PhysRevB.92.020407</identifier><language>eng</language><subject>Condensed matter ; Electric potential ; Electrical junctions ; Magnesium oxide ; Magnetic anisotropy ; Modulation ; Strain ; Voltage</subject><ispartof>Physical review. 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These findings demonstrate the feasibility of highly sensitive VCMA through strain engineering, which may provide a viable avenue for tailoring magnetoelectric properties for spintronic applications.</description><subject>Condensed matter</subject><subject>Electric potential</subject><subject>Electrical junctions</subject><subject>Magnesium oxide</subject><subject>Magnetic anisotropy</subject><subject>Modulation</subject><subject>Strain</subject><subject>Voltage</subject><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo1kF1LwzAUhosoOKd_wKtcetMtX02bSx06hYEiCt6FND3dIm0yk3TQf2_H9Oo9cB5eznmy7JbgBSGYLd92Y3yHw8NC0gWmmOPyLJuRosA5ZcXX-TRjWeWYUHKZXcX4jTHhktNZZtdWu4QOvkt6C6j3zdDpZL1DvkW93jpI1iDtbPQp-P2IrEMxBW0dNGgH-jCiHpLulid2aV08FvgwLRMEP7GDSUOAeJ1dtLqLcPOX8-zz6fFj9ZxvXtcvq_tNbpjEKeeCayOLqmymELUkRAtTtQybuiayZHXRlIaDgFJwSnlbtAIqboypGQAXmM2zu1PvPvifAWJSvY0Guk478ENUpCwx42L6fkLpCTXToTFAq_bB9jqMimB19Kr-vSpJ1ckr-wVd4XDZ</recordid><startdate>20150720</startdate><enddate>20150720</enddate><creator>Ong, P. 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The underlying mechanism is the interplay of the strain- and electric-field-induced changes in the spin-orbit coupled states d at the interfaces and the strain-induced modification of the dielectric constant of MgO. These findings demonstrate the feasibility of highly sensitive VCMA through strain engineering, which may provide a viable avenue for tailoring magnetoelectric properties for spintronic applications.</abstract><doi>10.1103/PhysRevB.92.020407</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Physical review. B, Condensed matter and materials physics, 2015-07, Vol.92 (2), Article 020407 |
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| language | eng |
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| source | American Physical Society Journals |
| subjects | Condensed matter Electric potential Electrical junctions Magnesium oxide Magnetic anisotropy Modulation Strain Voltage |
| title | Giant voltage modulation of magnetic anisotropy in strained heavy metal/magnet/insulator heterostructures |
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