Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect
The physical origin of the strong emission line at 3.45 eV and broadening yellow luminescence (YL) band centered at 2.2 eV in GaN nanowire (NW) has been debated for many years. Here, we solve these two notable issues by using state-of-the-art first-principles calculations based on many-body perturba...
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Veröffentlicht in: | ACS nano 2015-09, Vol.9 (9), p.9276-9283 |
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Sprache: | eng |
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