Size, composition, and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy
We investigate the effect of various parameters on the room-temperature interband tunneling characteristics of molecular beam epitaxy grown, intrinsically n-type In(Ga)As nanowires (NWs) on p-type silicon (Si) substrate using conductive atomic force microscopy. Large interband tunnel currents (>4...
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| Veröffentlicht in: | Applied physics letters 2012-12, Vol.101 (23) |
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| container_title | Applied physics letters |
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| creator | Yang, Tao Hertenberger, Simon Morkotter, Stefanie Abstreiter, Gerhard Koblmueller, Gregor |
| description | We investigate the effect of various parameters on the room-temperature interband tunneling characteristics of molecular beam epitaxy grown, intrinsically n-type In(Ga)As nanowires (NWs) on p-type silicon (Si) substrate using conductive atomic force microscopy. Large interband tunnel currents (>40 kA/cm2) and reduced breakdown voltages are obtained by increasing the p-type substrate doping level to >1 1019 cm-3. Current mapping under forward bias reveals a bimodal distribution of NW/Si hetero-junction tunnel diodes exhibiting either negative differential resistance (NDR, Esaki diode) or high excess currents (without NDR). By downscaling the NW diameter from similar to 90 nm to similar to 25 nm, peak-to-valley current ratios in NDR-type diodes increase and saturate with maximum values of similar to 3. Increasing Ga content (xGa up to similar to 0.1) in In-rich ternary InGaAs NWs preserves the NDR behavior, while the peak current shifts to lower voltages due to reduced Fermi energy in InGaAs. Band profile calculations were performed to further support these findings. |
| doi_str_mv | 10.1063/1.4768001 |
| format | Article |
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Large interband tunnel currents (>40 kA/cm2) and reduced breakdown voltages are obtained by increasing the p-type substrate doping level to >1 1019 cm-3. Current mapping under forward bias reveals a bimodal distribution of NW/Si hetero-junction tunnel diodes exhibiting either negative differential resistance (NDR, Esaki diode) or high excess currents (without NDR). By downscaling the NW diameter from similar to 90 nm to similar to 25 nm, peak-to-valley current ratios in NDR-type diodes increase and saturate with maximum values of similar to 3. Increasing Ga content (xGa up to similar to 0.1) in In-rich ternary InGaAs NWs preserves the NDR behavior, while the peak current shifts to lower voltages due to reduced Fermi energy in InGaAs. Band profile calculations were performed to further support these findings.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4768001</identifier><language>eng</language><subject>Doping ; Electric potential ; Indium gallium arsenides ; Nanomaterials ; Nanostructure ; Nanowires ; Silicon substrates ; Tunnel diodes ; Voltage</subject><ispartof>Applied physics letters, 2012-12, Vol.101 (23)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-9b49139fceb4036c95d3341c441f1ffd027edf7c39516232c1e82b68cd74e1123</citedby><cites>FETCH-LOGICAL-c361t-9b49139fceb4036c95d3341c441f1ffd027edf7c39516232c1e82b68cd74e1123</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Yang, Tao</creatorcontrib><creatorcontrib>Hertenberger, Simon</creatorcontrib><creatorcontrib>Morkotter, Stefanie</creatorcontrib><creatorcontrib>Abstreiter, Gerhard</creatorcontrib><creatorcontrib>Koblmueller, Gregor</creatorcontrib><title>Size, composition, and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy</title><title>Applied physics letters</title><description>We investigate the effect of various parameters on the room-temperature interband tunneling characteristics of molecular beam epitaxy grown, intrinsically n-type In(Ga)As nanowires (NWs) on p-type silicon (Si) substrate using conductive atomic force microscopy. Large interband tunnel currents (>40 kA/cm2) and reduced breakdown voltages are obtained by increasing the p-type substrate doping level to >1 1019 cm-3. Current mapping under forward bias reveals a bimodal distribution of NW/Si hetero-junction tunnel diodes exhibiting either negative differential resistance (NDR, Esaki diode) or high excess currents (without NDR). By downscaling the NW diameter from similar to 90 nm to similar to 25 nm, peak-to-valley current ratios in NDR-type diodes increase and saturate with maximum values of similar to 3. Increasing Ga content (xGa up to similar to 0.1) in In-rich ternary InGaAs NWs preserves the NDR behavior, while the peak current shifts to lower voltages due to reduced Fermi energy in InGaAs. Band profile calculations were performed to further support these findings.</description><subject>Doping</subject><subject>Electric potential</subject><subject>Indium gallium arsenides</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Nanowires</subject><subject>Silicon substrates</subject><subject>Tunnel diodes</subject><subject>Voltage</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkVFLwzAUhYMoOKcP_oM8brBuuU3atI9j6BwMfJg-lza5kUib1KZV56-3w737dO6Bj8M9HELugS2BpXwFSyHTjDG4IBNgUkYcILskE8YYj9I8gWtyE8L7aJOY8wn5PtgfXFDlm9YH21vvFrR0mmrfWvdG0RhUfaDe0Z2bbcv5OlBXOv9lO1wdLO0H57Cm2nqNgbadr1DT6jjmOT2o3n4iLXvfWEWN7xTS8ep8UL493pIrU9YB7846Ja-PDy-bp2j_vN1t1vtI8RT6KK9EDjw3CivBeKryRHMuQAkBBozRLJaojVR8rJbGPFaAWVylmdJSIEDMp2T2lzs-9zFg6IvGBoV1XTr0QyhASsbjHBLxPypAZlnCUjai8z_0VCd0aIq2s03ZHQtgxWmIAorzEPwX6fJ6Kg</recordid><startdate>20121203</startdate><enddate>20121203</enddate><creator>Yang, Tao</creator><creator>Hertenberger, Simon</creator><creator>Morkotter, Stefanie</creator><creator>Abstreiter, Gerhard</creator><creator>Koblmueller, Gregor</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20121203</creationdate><title>Size, composition, and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy</title><author>Yang, Tao ; Hertenberger, Simon ; Morkotter, Stefanie ; Abstreiter, Gerhard ; Koblmueller, Gregor</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-9b49139fceb4036c95d3341c441f1ffd027edf7c39516232c1e82b68cd74e1123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Doping</topic><topic>Electric potential</topic><topic>Indium gallium arsenides</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Nanowires</topic><topic>Silicon substrates</topic><topic>Tunnel diodes</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Tao</creatorcontrib><creatorcontrib>Hertenberger, Simon</creatorcontrib><creatorcontrib>Morkotter, Stefanie</creatorcontrib><creatorcontrib>Abstreiter, Gerhard</creatorcontrib><creatorcontrib>Koblmueller, Gregor</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Tao</au><au>Hertenberger, Simon</au><au>Morkotter, Stefanie</au><au>Abstreiter, Gerhard</au><au>Koblmueller, Gregor</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Size, composition, and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy</atitle><jtitle>Applied physics letters</jtitle><date>2012-12-03</date><risdate>2012</risdate><volume>101</volume><issue>23</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We investigate the effect of various parameters on the room-temperature interband tunneling characteristics of molecular beam epitaxy grown, intrinsically n-type In(Ga)As nanowires (NWs) on p-type silicon (Si) substrate using conductive atomic force microscopy. Large interband tunnel currents (>40 kA/cm2) and reduced breakdown voltages are obtained by increasing the p-type substrate doping level to >1 1019 cm-3. Current mapping under forward bias reveals a bimodal distribution of NW/Si hetero-junction tunnel diodes exhibiting either negative differential resistance (NDR, Esaki diode) or high excess currents (without NDR). By downscaling the NW diameter from similar to 90 nm to similar to 25 nm, peak-to-valley current ratios in NDR-type diodes increase and saturate with maximum values of similar to 3. Increasing Ga content (xGa up to similar to 0.1) in In-rich ternary InGaAs NWs preserves the NDR behavior, while the peak current shifts to lower voltages due to reduced Fermi energy in InGaAs. Band profile calculations were performed to further support these findings.</abstract><doi>10.1063/1.4768001</doi></addata></record> |
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| ispartof | Applied physics letters, 2012-12, Vol.101 (23) |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Doping Electric potential Indium gallium arsenides Nanomaterials Nanostructure Nanowires Silicon substrates Tunnel diodes Voltage |
| title | Size, composition, and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy |
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