Role of film thickness on the microstructure and electrical properties of Mn-Co-Ni-O thin film thermistors
•Thin film thermistors with different film thickness (in the range of 400–750nm) were successfully prepared.•The resistance measured at room temperature (R0) was almost linearly decreasing with the increase of thickness.•The sensitivity and active energy were increase slightly with the film thicknes...
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| Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2015-08, Vol.198, p.20-24 |
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| container_title | Materials science & engineering. B, Solid-state materials for advanced technology |
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| creator | He, L. Ling, Z.Y. Ling, D.X. Wu, M.Y. Zhang, G. Liu, M.X. Zhang, S.Q. |
| description | •Thin film thermistors with different film thickness (in the range of 400–750nm) were successfully prepared.•The resistance measured at room temperature (R0) was almost linearly decreasing with the increase of thickness.•The sensitivity and active energy were increase slightly with the film thickness increasing.•The aging coefficient decreases sharply with the film thickness increasing.
Mn1.85Co0.3Ni0.85O4 (MCN) thin film thermistors with different film thickness (in the range of 400–750nm) were prepared on Al2O3 substrates by sol–gel technique. The effects of film thickness on the microstructure and electrical properties of the prepared thin film thermistors were investigated by XRD, FESEM, resistance-temperature measurements and Hall measurements. The results showed that MCN thin film thermistors were of good crystallization and compact surface, and the carrier concentration was independent on the thickness. The resistance measured at room temperature was almost linearly decreasing with the increase of thickness. The sensitivity and activation energy increased slightly, then, the aging coefficient decreased sharply with the film thickness increasing. |
| doi_str_mv | 10.1016/j.mseb.2015.04.001 |
| format | Article |
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Mn1.85Co0.3Ni0.85O4 (MCN) thin film thermistors with different film thickness (in the range of 400–750nm) were prepared on Al2O3 substrates by sol–gel technique. The effects of film thickness on the microstructure and electrical properties of the prepared thin film thermistors were investigated by XRD, FESEM, resistance-temperature measurements and Hall measurements. The results showed that MCN thin film thermistors were of good crystallization and compact surface, and the carrier concentration was independent on the thickness. The resistance measured at room temperature was almost linearly decreasing with the increase of thickness. The sensitivity and activation energy increased slightly, then, the aging coefficient decreased sharply with the film thickness increasing.</description><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/j.mseb.2015.04.001</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Aluminum oxide ; Crystallization ; Electrical properties ; Electrical property ; Film thickness ; Microstructure ; Sol–gel technique ; Surface chemistry ; Thermistor ; Thermistors ; Thin films</subject><ispartof>Materials science & engineering. B, Solid-state materials for advanced technology, 2015-08, Vol.198, p.20-24</ispartof><rights>2015 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c333t-8f3e2e9f78aedd21143561ecfbcb1ccee29f6703859016f59e96c500e499fee53</citedby><cites>FETCH-LOGICAL-c333t-8f3e2e9f78aedd21143561ecfbcb1ccee29f6703859016f59e96c500e499fee53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mseb.2015.04.001$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>He, L.</creatorcontrib><creatorcontrib>Ling, Z.Y.</creatorcontrib><creatorcontrib>Ling, D.X.</creatorcontrib><creatorcontrib>Wu, M.Y.</creatorcontrib><creatorcontrib>Zhang, G.</creatorcontrib><creatorcontrib>Liu, M.X.</creatorcontrib><creatorcontrib>Zhang, S.Q.</creatorcontrib><title>Role of film thickness on the microstructure and electrical properties of Mn-Co-Ni-O thin film thermistors</title><title>Materials science & engineering. B, Solid-state materials for advanced technology</title><description>•Thin film thermistors with different film thickness (in the range of 400–750nm) were successfully prepared.•The resistance measured at room temperature (R0) was almost linearly decreasing with the increase of thickness.•The sensitivity and active energy were increase slightly with the film thickness increasing.•The aging coefficient decreases sharply with the film thickness increasing.
Mn1.85Co0.3Ni0.85O4 (MCN) thin film thermistors with different film thickness (in the range of 400–750nm) were prepared on Al2O3 substrates by sol–gel technique. The effects of film thickness on the microstructure and electrical properties of the prepared thin film thermistors were investigated by XRD, FESEM, resistance-temperature measurements and Hall measurements. The results showed that MCN thin film thermistors were of good crystallization and compact surface, and the carrier concentration was independent on the thickness. The resistance measured at room temperature was almost linearly decreasing with the increase of thickness. The sensitivity and activation energy increased slightly, then, the aging coefficient decreased sharply with the film thickness increasing.</description><subject>Aluminum oxide</subject><subject>Crystallization</subject><subject>Electrical properties</subject><subject>Electrical property</subject><subject>Film thickness</subject><subject>Microstructure</subject><subject>Sol–gel technique</subject><subject>Surface chemistry</subject><subject>Thermistor</subject><subject>Thermistors</subject><subject>Thin films</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLxDAUhYMoOI7-AVdZuknNTfoKuJHBF6gDouvQSW8wtW3GpCP4700Z3bq6XDjncM5HyDnwDDiUl102RNxkgkOR8TzjHA7IAupKslzl-SFZcCWAFcCrY3ISY8eTQgixIN2L75F6S63rBzq9O_MxYozUj-lBOjgTfJzCzky7gLQZW4o9mik40_R0G_wWw-QwzglPI1t59uzYes4Z_xIxDC5OPsRTcmSbPuLZ712St9ub19U9e1zfPayuH5mRUk6sthIFKlvVDbatAMhlUQIauzEbMAZRKFtWXNaFSsttoVCVpuAcc6UsYiGX5GKfm-p97jBOOhUw2PfNiH4XNVTJDSWIKknFXjqvjAGt3gY3NOFbA9czWN3pGayewWqe64Qtma72JkwjvhwGHY3D0WDrQkKjW-_-s_8AKT-C4Q</recordid><startdate>201508</startdate><enddate>201508</enddate><creator>He, L.</creator><creator>Ling, Z.Y.</creator><creator>Ling, D.X.</creator><creator>Wu, M.Y.</creator><creator>Zhang, G.</creator><creator>Liu, M.X.</creator><creator>Zhang, S.Q.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201508</creationdate><title>Role of film thickness on the microstructure and electrical properties of Mn-Co-Ni-O thin film thermistors</title><author>He, L. ; Ling, Z.Y. ; Ling, D.X. ; Wu, M.Y. ; Zhang, G. ; Liu, M.X. ; Zhang, S.Q.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c333t-8f3e2e9f78aedd21143561ecfbcb1ccee29f6703859016f59e96c500e499fee53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Aluminum oxide</topic><topic>Crystallization</topic><topic>Electrical properties</topic><topic>Electrical property</topic><topic>Film thickness</topic><topic>Microstructure</topic><topic>Sol–gel technique</topic><topic>Surface chemistry</topic><topic>Thermistor</topic><topic>Thermistors</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>He, L.</creatorcontrib><creatorcontrib>Ling, Z.Y.</creatorcontrib><creatorcontrib>Ling, D.X.</creatorcontrib><creatorcontrib>Wu, M.Y.</creatorcontrib><creatorcontrib>Zhang, G.</creatorcontrib><creatorcontrib>Liu, M.X.</creatorcontrib><creatorcontrib>Zhang, S.Q.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>He, L.</au><au>Ling, Z.Y.</au><au>Ling, D.X.</au><au>Wu, M.Y.</au><au>Zhang, G.</au><au>Liu, M.X.</au><au>Zhang, S.Q.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of film thickness on the microstructure and electrical properties of Mn-Co-Ni-O thin film thermistors</atitle><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle><date>2015-08</date><risdate>2015</risdate><volume>198</volume><spage>20</spage><epage>24</epage><pages>20-24</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><abstract>•Thin film thermistors with different film thickness (in the range of 400–750nm) were successfully prepared.•The resistance measured at room temperature (R0) was almost linearly decreasing with the increase of thickness.•The sensitivity and active energy were increase slightly with the film thickness increasing.•The aging coefficient decreases sharply with the film thickness increasing.
Mn1.85Co0.3Ni0.85O4 (MCN) thin film thermistors with different film thickness (in the range of 400–750nm) were prepared on Al2O3 substrates by sol–gel technique. The effects of film thickness on the microstructure and electrical properties of the prepared thin film thermistors were investigated by XRD, FESEM, resistance-temperature measurements and Hall measurements. The results showed that MCN thin film thermistors were of good crystallization and compact surface, and the carrier concentration was independent on the thickness. The resistance measured at room temperature was almost linearly decreasing with the increase of thickness. The sensitivity and activation energy increased slightly, then, the aging coefficient decreased sharply with the film thickness increasing.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mseb.2015.04.001</doi><tpages>5</tpages></addata></record> |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Aluminum oxide Crystallization Electrical properties Electrical property Film thickness Microstructure Sol–gel technique Surface chemistry Thermistor Thermistors Thin films |
| title | Role of film thickness on the microstructure and electrical properties of Mn-Co-Ni-O thin film thermistors |
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