Optimization of Gallium Nitride Metalorganic Chemical Vapor Deposition Process

This paper investigates the simulation, response surface modeling, and optimization of the metalorganic chemical vapor deposition (MOCVD) process for the deposition of gallium nitride (GaN). Trimethylgallium (TMGa) and ammonia (NH3) are the precursors carried by hydrogen into the rotating-disk react...

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Veröffentlicht in:	Journal of heat transfer 2015-06, Vol.137 (6)
Hauptverfasser:	George, Pradeep, Meng, Jiandong, Jaluria, Yogesh
Format:	Artikel
Sprache:	eng
Schlagworte:	Deposition Gallium nitrides Inlets Mathematical models Optimization Precursors Response surfaces Variability
Online-Zugang:	Volltext
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