Electric bias control of impurity effects in bilayer graphene

Formation of localized impurity levels within the band gap in bigraphene under applied electric field and the conditions for their collectivization at finite impurity concentrations are considered. It is shown that a qualitative restructuring of the quasiparticle spectrum within the initial band gap...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-08, Vol.92 (7), Article 075401
Hauptverfasser:	Pogorelov, Y. G., Santos, M. C., Loktev, V. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accessibility Bias Condensed matter Electric fields Graphene Impurities Insulators Voltage
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!