Nitric oxide assisted C sub(60) secondary ion mass spectrometry for molecular depth profiling of polyelectrolyte multilayers

Rationale Secondary ion mass spectrometry (SIMS) with polyatomic primary ions provides a successful tool for molecular depth profiling of polymer systems, relevant in many technological applications. Widespread C sub(60) sources, however, cause in some polymers extensive damage with loss of molecula...

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Veröffentlicht in:Rapid communications in mass spectrometry 2015-12, Vol.29 (23), p.2204-2210
Hauptverfasser: Zappala, G, Motta, V, Tuccitto, N, Vitale, S, Torrisi, A, Licciardello, A
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container_end_page 2210
container_issue 23
container_start_page 2204
container_title Rapid communications in mass spectrometry
container_volume 29
creator Zappala, G
Motta, V
Tuccitto, N
Vitale, S
Torrisi, A
Licciardello, A
description Rationale Secondary ion mass spectrometry (SIMS) with polyatomic primary ions provides a successful tool for molecular depth profiling of polymer systems, relevant in many technological applications. Widespread C sub(60) sources, however, cause in some polymers extensive damage with loss of molecular information along depth. We study a method, based on the use of a radical scavenger, for inhibiting ion-beam-induced reactions causing sample damage. Methods Layered polystyrene sulfonate and polyacrylic acid based polyelectrolyte films, behaving differently towards C sub(60) beam-induced damage, were selected and prepared as model systems. They were depth profiled by means of time-of-flight (TOF)-SIMS in dual beam mode, using fullerene ions for sputtering. Nitric oxide was introduced into the analysis chamber as a radical scavenger. The effect of sample cooling combined with NO-dosing on the quality of depth profiles was explored. Results NO-dosing during C sub(60)-SIMS depth profiling of >1 micrometer-thick multilayered polyelectrolytes allows detection, along depth, of characteristic fragments from systems otherwise damaged by C sub(60) bombardment, and increases sputtering yield by more than one order of magnitude. By contrast, NO has little influence on those layers that are well profiled with C sub(60) alone. Such leveling effect, more pronounced at low temperature, leads to a dramatic improvement of profile quality, with a clear definition of interfaces. Conclusions NO-dosing provides a tool for extending the applicability, in SIMS depth profiling, of the widely spread fullerene ion sources. In view of the acceptable erosion rates on inorganics, obtainable with C sub(60), the method could be of relevance also in connection with the 3D-imaging of hybrid polymer/inorganic systems.
doi_str_mv 10.1002/rcm.7383
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Widespread C sub(60) sources, however, cause in some polymers extensive damage with loss of molecular information along depth. We study a method, based on the use of a radical scavenger, for inhibiting ion-beam-induced reactions causing sample damage. Methods Layered polystyrene sulfonate and polyacrylic acid based polyelectrolyte films, behaving differently towards C sub(60) beam-induced damage, were selected and prepared as model systems. They were depth profiled by means of time-of-flight (TOF)-SIMS in dual beam mode, using fullerene ions for sputtering. Nitric oxide was introduced into the analysis chamber as a radical scavenger. The effect of sample cooling combined with NO-dosing on the quality of depth profiles was explored. Results NO-dosing during C sub(60)-SIMS depth profiling of &gt;1 micrometer-thick multilayered polyelectrolytes allows detection, along depth, of characteristic fragments from systems otherwise damaged by C sub(60) bombardment, and increases sputtering yield by more than one order of magnitude. By contrast, NO has little influence on those layers that are well profiled with C sub(60) alone. Such leveling effect, more pronounced at low temperature, leads to a dramatic improvement of profile quality, with a clear definition of interfaces. Conclusions NO-dosing provides a tool for extending the applicability, in SIMS depth profiling, of the widely spread fullerene ion sources. 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Widespread C sub(60) sources, however, cause in some polymers extensive damage with loss of molecular information along depth. We study a method, based on the use of a radical scavenger, for inhibiting ion-beam-induced reactions causing sample damage. Methods Layered polystyrene sulfonate and polyacrylic acid based polyelectrolyte films, behaving differently towards C sub(60) beam-induced damage, were selected and prepared as model systems. They were depth profiled by means of time-of-flight (TOF)-SIMS in dual beam mode, using fullerene ions for sputtering. Nitric oxide was introduced into the analysis chamber as a radical scavenger. The effect of sample cooling combined with NO-dosing on the quality of depth profiles was explored. Results NO-dosing during C sub(60)-SIMS depth profiling of &gt;1 micrometer-thick multilayered polyelectrolytes allows detection, along depth, of characteristic fragments from systems otherwise damaged by C sub(60) bombardment, and increases sputtering yield by more than one order of magnitude. By contrast, NO has little influence on those layers that are well profiled with C sub(60) alone. Such leveling effect, more pronounced at low temperature, leads to a dramatic improvement of profile quality, with a clear definition of interfaces. Conclusions NO-dosing provides a tool for extending the applicability, in SIMS depth profiling, of the widely spread fullerene ion sources. 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subjects Buckminsterfullerene
Damage
Depth profiling
Fullerenes
Polyelectrolytes
Scavengers
Secondary ion mass spectrometry
title Nitric oxide assisted C sub(60) secondary ion mass spectrometry for molecular depth profiling of polyelectrolyte multilayers
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