High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped alpha -Si sub(3)N sub(4) nanowire

For the first time, we fabricated p-type FETs using an individual heavily Al-doped alpha -Si sub(3)N sub(4) NW with a single-crystal structure. The results show that despite a heavy Al-doping level, a typical device still exhibits high performance with an extremely high on/off ratio, 10 super(3), at...

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Veröffentlicht in:	Chemical communications (Cambridge, England) England), 2012-05, Vol.48 (48), p.6016-6018
Hauptverfasser:	Chen, Youqiang, Zhang, Xinni, Zhao, Qing, He, Li, Xie, Zhipeng, Wang, Huatao
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Devices Extreme values Nanocomposites Nanomaterials Nanostructure Nanowires Semiconductor devices Transistors
Online-Zugang:	Volltext
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