A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing
A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing is presented. The results demonstrated that the formation and removal of chemical products both proceeded from the hexagonal close-packed sapphire Al-O layers described as atomic terraces, and the material re...
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| Veröffentlicht in: | Surface & coatings technology 2015-05, Vol.270, p.206-220 |
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| creator | Shi, Xiaolei Pan, Guoshun Zhou, Yan Xu, Li Zou, Chunli Gong, Hua |
| description | A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing is presented. The results demonstrated that the formation and removal of chemical products both proceeded from the hexagonal close-packed sapphire Al-O layers described as atomic terraces, and the material removal rule of sapphire (0001) during chemical–mechanical polishing is the regular removal of chemical products formed from the atomic terraces, which were successfully characterized by AFM with super-sharp scanning probes. Besides, we also found that the surface with screw dislocations could not be polished completely by CMP due to the crystal distortion energy, and a hard polishing pad could remove scratches more effectively than a soft one
•We obtain high-definition atomic terraces by AFM and super-sharp Si probe.•We demonstrate residual chemical products formed from atomic terraces during CMP and relative properties.•We infer the formation and removal rule of sapphire during CMP based on chemical products.•We demonstrate preferential removal rule caused by screw dislocations. |
| doi_str_mv | 10.1016/j.surfcoat.2015.02.053 |
| format | Article |
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•We obtain high-definition atomic terraces by AFM and super-sharp Si probe.•We demonstrate residual chemical products formed from atomic terraces during CMP and relative properties.•We infer the formation and removal rule of sapphire during CMP based on chemical products.•We demonstrate preferential removal rule caused by screw dislocations.</description><identifier>ISSN: 0257-8972</identifier><identifier>EISSN: 1879-3347</identifier><identifier>DOI: 10.1016/j.surfcoat.2015.02.053</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Aluminum ; Chemical products ; Chemical-mechanical polishing ; Crystals ; Distortion ; Material removal mechanism ; Polished ; Polishing ; Sapphire ; Sapphire substrate ; Step-terrace structure ; Terraces</subject><ispartof>Surface & coatings technology, 2015-05, Vol.270, p.206-220</ispartof><rights>2015 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c481t-5ac9a88540e41106a261d47748f172eca311e97ff35e17b0ed5400e78b62c5ce3</citedby><cites>FETCH-LOGICAL-c481t-5ac9a88540e41106a261d47748f172eca311e97ff35e17b0ed5400e78b62c5ce3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.surfcoat.2015.02.053$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Shi, Xiaolei</creatorcontrib><creatorcontrib>Pan, Guoshun</creatorcontrib><creatorcontrib>Zhou, Yan</creatorcontrib><creatorcontrib>Xu, Li</creatorcontrib><creatorcontrib>Zou, Chunli</creatorcontrib><creatorcontrib>Gong, Hua</creatorcontrib><title>A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing</title><title>Surface & coatings technology</title><description>A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing is presented. The results demonstrated that the formation and removal of chemical products both proceeded from the hexagonal close-packed sapphire Al-O layers described as atomic terraces, and the material removal rule of sapphire (0001) during chemical–mechanical polishing is the regular removal of chemical products formed from the atomic terraces, which were successfully characterized by AFM with super-sharp scanning probes. Besides, we also found that the surface with screw dislocations could not be polished completely by CMP due to the crystal distortion energy, and a hard polishing pad could remove scratches more effectively than a soft one
•We obtain high-definition atomic terraces by AFM and super-sharp Si probe.•We demonstrate residual chemical products formed from atomic terraces during CMP and relative properties.•We infer the formation and removal rule of sapphire during CMP based on chemical products.•We demonstrate preferential removal rule caused by screw dislocations.</description><subject>Aluminum</subject><subject>Chemical products</subject><subject>Chemical-mechanical polishing</subject><subject>Crystals</subject><subject>Distortion</subject><subject>Material removal mechanism</subject><subject>Polished</subject><subject>Polishing</subject><subject>Sapphire</subject><subject>Sapphire substrate</subject><subject>Step-terrace structure</subject><subject>Terraces</subject><issn>0257-8972</issn><issn>1879-3347</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqFkE1OwzAQRi0EEqVwBeRlWSTYThwnO6qKP6kSG1giy7XH1FUSBztBYscduCEnIVWALatZzPc-zTyEzilJKaHF5S6NQ7Daqz5lhPKUsJTw7ADNaCmqJMtycYhmhHGRlJVgx-gkxh0hhIoqn6HnJY79YN6xt1hvoXFa1bgL3gy6j9j60IDBvsVRdd3WBcCLPXqBzRBc-_KHfH18NqC3qp14X7u4Hfen6MiqOsLZz5yjp5vrx9Vdsn64vV8t14nOS9onXOlKlSXPCeSUkkKxgppciLy0VDDQKqMUKmFtxoGKDQEzRgmIclMwzTVkc7SYesfLXweIvWxc1FDXqgU_REmFIKwsOONjtJiiOvgYA1jZBdeo8C4pkXufcid_fcq9T0mYHH2O4NUEwvjIm4Mgo3bQajCjFt1L491_Fd9B14LS</recordid><startdate>20150525</startdate><enddate>20150525</enddate><creator>Shi, Xiaolei</creator><creator>Pan, Guoshun</creator><creator>Zhou, Yan</creator><creator>Xu, Li</creator><creator>Zou, Chunli</creator><creator>Gong, Hua</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20150525</creationdate><title>A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing</title><author>Shi, Xiaolei ; Pan, Guoshun ; Zhou, Yan ; Xu, Li ; Zou, Chunli ; Gong, Hua</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c481t-5ac9a88540e41106a261d47748f172eca311e97ff35e17b0ed5400e78b62c5ce3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Aluminum</topic><topic>Chemical products</topic><topic>Chemical-mechanical polishing</topic><topic>Crystals</topic><topic>Distortion</topic><topic>Material removal mechanism</topic><topic>Polished</topic><topic>Polishing</topic><topic>Sapphire</topic><topic>Sapphire substrate</topic><topic>Step-terrace structure</topic><topic>Terraces</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shi, Xiaolei</creatorcontrib><creatorcontrib>Pan, Guoshun</creatorcontrib><creatorcontrib>Zhou, Yan</creatorcontrib><creatorcontrib>Xu, Li</creatorcontrib><creatorcontrib>Zou, Chunli</creatorcontrib><creatorcontrib>Gong, Hua</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Surface & coatings technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shi, Xiaolei</au><au>Pan, Guoshun</au><au>Zhou, Yan</au><au>Xu, Li</au><au>Zou, Chunli</au><au>Gong, Hua</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing</atitle><jtitle>Surface & coatings technology</jtitle><date>2015-05-25</date><risdate>2015</risdate><volume>270</volume><spage>206</spage><epage>220</epage><pages>206-220</pages><issn>0257-8972</issn><eissn>1879-3347</eissn><abstract>A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing is presented. The results demonstrated that the formation and removal of chemical products both proceeded from the hexagonal close-packed sapphire Al-O layers described as atomic terraces, and the material removal rule of sapphire (0001) during chemical–mechanical polishing is the regular removal of chemical products formed from the atomic terraces, which were successfully characterized by AFM with super-sharp scanning probes. Besides, we also found that the surface with screw dislocations could not be polished completely by CMP due to the crystal distortion energy, and a hard polishing pad could remove scratches more effectively than a soft one
•We obtain high-definition atomic terraces by AFM and super-sharp Si probe.•We demonstrate residual chemical products formed from atomic terraces during CMP and relative properties.•We infer the formation and removal rule of sapphire during CMP based on chemical products.•We demonstrate preferential removal rule caused by screw dislocations.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.surfcoat.2015.02.053</doi><tpages>15</tpages></addata></record> |
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| ispartof | Surface & coatings technology, 2015-05, Vol.270, p.206-220 |
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| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Aluminum Chemical products Chemical-mechanical polishing Crystals Distortion Material removal mechanism Polished Polishing Sapphire Sapphire substrate Step-terrace structure Terraces |
| title | A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing |
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