In situ spectroscopy of intrinsic Bi sub(2) Te sub(3) topological insulator thin films and impact of extrinsic defects

Combined in situ x-ray photoemission spectroscopy, scanning tunneling spectroscopy, and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi sub(2) Te sub(3) on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-07, Vol.92 (3)
Hauptverfasser: Ngabonziza, P, Heimbuch, R, de Jong, N, Klaassen, R A, Stehno, M P, Snelder, M, Solmaz, A, Ramankutty, S V, Frantzeskakis, E, van Heumen, E, Koster, G, Golden, M S, Zandvliet, H J W, Brinkman, A
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container_title Physical review. B, Condensed matter and materials physics
container_volume 92
creator Ngabonziza, P
Heimbuch, R
de Jong, N
Klaassen, R A
Stehno, M P
Snelder, M
Solmaz, A
Ramankutty, S V
Frantzeskakis, E
van Heumen, E
Koster, G
Golden, M S
Zandvliet, H J W
Brinkman, A
description Combined in situ x-ray photoemission spectroscopy, scanning tunneling spectroscopy, and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi sub(2) Te sub(3) on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counterdoping. We observe that the surface morphology and electronic band structure of Bi sub(2) Te sub(3) are not affected by in vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.
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subjects Condensed matter
Devices
Electronics
Exposure
Fermi surfaces
Photoelectron spectroscopy
Thin films
Topology
title In situ spectroscopy of intrinsic Bi sub(2) Te sub(3) topological insulator thin films and impact of extrinsic defects
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