Enhancement of memory windows in Pt/Ta2O5−x/Ta bipolar resistive switches via a graphene oxide insertion layer

The influence of a graphene oxide (GO) layer on Pt/Ta2O5−x/Ta bipolar resistive switches, in which the GO layer is spin-coated on the Ta bottom electrode before the growth of a Ta2O5−x switching element was examined. Experimental observations suggest that the insertion of the GO layer is crucial for...

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Veröffentlicht in:	Thin solid films 2015-07, Vol.587, p.57-60
Hauptverfasser:	Chung, Je Bock, Bae, Yoon Cheol, Lee, Ah Rahm, Baek, Gwang Ho, Lee, Min Yong, Yoon, Hee Wook, Park, Ho Bum, Hong, Jin Pyo
Format:	Artikel
Sprache:	eng
Schlagworte:	Bipolar resistive switches Graphene Graphene oxide Insertion Oxides Platinum Resistive random-access memory Resistive switching Switches Switching Tantalum Voltage
Online-Zugang:	Volltext
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