Temperature Dependence of Microwave Dielectric Performance of Silica
The dielectric properties of silica at temperature from 300 to 1 600 K and at microwave frequency band are investigated. By use of material studio software, the lattice constant, band energy gap and optical permittivity of silica are calculated, and to be used as the key parameters to investigate th...
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| Veröffentlicht in: | Shanghai jiao tong da xue xue bao 2012-12, Vol.17 (6), p.748-754 |
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| container_title | Shanghai jiao tong da xue xue bao |
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| creator | 张婷 吴孟强 张树人 何茗 李恩 王金明 张大海 何风梅 李仲平 |
| description | The dielectric properties of silica at temperature from 300 to 1 600 K and at microwave frequency band are investigated. By use of material studio software, the lattice constant, band energy gap and optical permittivity of silica are calculated, and to be used as the key parameters to investigate the microwave dielectric properties of silica. It is found that its permittivity and loss are increased with increasing temperature. In addition, the ionic conduction loss caused by the defects in silica is very small from the calculation and the value is about 10-5 level at 2 000 K. The application of this analysis allows to estimate the permittivity and dielectric loss of silica both at high temperature and microwave band, which is currently still difficult to be measured directly. |
| doi_str_mv | 10.1007/s12204-012-1358-x |
| format | Article |
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The application of this analysis allows to estimate the permittivity and dielectric loss of silica both at high temperature and microwave band, which is currently still difficult to be measured directly.</description><subject>Architecture</subject><subject>Computer programs</subject><subject>Computer Science</subject><subject>Dielectric constant</subject><subject>Dielectric loss</subject><subject>Dielectric properties</subject><subject>Electrical Engineering</subject><subject>Engineering</subject><subject>Life Sciences</subject><subject>Materials Science</subject><subject>Mathematical analysis</subject><subject>Microwaves</subject><subject>Permittivity</subject><subject>Silicon dioxide</subject><subject>物质</subject><subject>理论</subject><subject>研究</subject><subject>高温物理学</subject><issn>1007-1172</issn><issn>1995-8188</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOwzAQRSMEEqXwAezCjo3B41fsJSpPqQgkytpy0klJlSap3UD5e1ylYgmrGY3OnZl7k-Qc6BVQml0HYIwKQoER4FKT7UEyAmMk0aD1YewjRAAydpychLCkVFDOzSi5neGqQ-82vcf0Fjts5tgUmLZl-lwVvv1yn3FeYY3FxldF-oq-bP3K7Zm3qq4Kd5ocla4OeLav4-T9_m42eSTTl4enyc2UFMzILVHcCOlczpWKL9I5ZZJJJZVWUmcZRZPzUiqQuZCqzFmOei5BaKVLKFVWSD5OLoe9nW_XPYaNXVWhwLp2DbZ9sJApBpxxlv2P7jAphDARhQGNdkPwWNrOVyvnvy1Qu8vNDuHaGK7dhWu3UcMGTYhss0Bvl23vm2j-T9HF_tBH2yzWUfd7SQgAZpThP01qheY</recordid><startdate>201212</startdate><enddate>201212</enddate><creator>张婷 吴孟强 张树人 何茗 李恩 王金明 张大海 何风梅 李仲平</creator><general>Shanghai Jiaotong University Press</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>7SR</scope><scope>7TB</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>201212</creationdate><title>Temperature Dependence of Microwave Dielectric Performance of Silica</title><author>张婷 吴孟强 张树人 何茗 李恩 王金明 张大海 何风梅 李仲平</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295x-63945aab3663580d025256568658770e9b3f5615b456fb2be8d514868f1f67c53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Architecture</topic><topic>Computer programs</topic><topic>Computer Science</topic><topic>Dielectric constant</topic><topic>Dielectric loss</topic><topic>Dielectric properties</topic><topic>Electrical Engineering</topic><topic>Engineering</topic><topic>Life Sciences</topic><topic>Materials Science</topic><topic>Mathematical analysis</topic><topic>Microwaves</topic><topic>Permittivity</topic><topic>Silicon dioxide</topic><topic>物质</topic><topic>理论</topic><topic>研究</topic><topic>高温物理学</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>张婷 吴孟强 张树人 何茗 李恩 王金明 张大海 何风梅 李仲平</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>Shanghai jiao tong da xue xue bao</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>张婷 吴孟强 张树人 何茗 李恩 王金明 张大海 何风梅 李仲平</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature Dependence of Microwave Dielectric Performance of Silica</atitle><jtitle>Shanghai jiao tong da xue xue bao</jtitle><stitle>J. Shanghai Jiaotong Univ. (Sci.)</stitle><addtitle>Journal of Shanghai Jiaotong university</addtitle><date>2012-12</date><risdate>2012</risdate><volume>17</volume><issue>6</issue><spage>748</spage><epage>754</epage><pages>748-754</pages><issn>1007-1172</issn><eissn>1995-8188</eissn><abstract>The dielectric properties of silica at temperature from 300 to 1 600 K and at microwave frequency band are investigated. By use of material studio software, the lattice constant, band energy gap and optical permittivity of silica are calculated, and to be used as the key parameters to investigate the microwave dielectric properties of silica. It is found that its permittivity and loss are increased with increasing temperature. In addition, the ionic conduction loss caused by the defects in silica is very small from the calculation and the value is about 10-5 level at 2 000 K. 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| fulltext | fulltext |
| identifier | ISSN: 1007-1172 |
| ispartof | Shanghai jiao tong da xue xue bao, 2012-12, Vol.17 (6), p.748-754 |
| issn | 1007-1172 1995-8188 |
| language | eng |
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| source | Springer Nature - Complete Springer Journals; Alma/SFX Local Collection |
| subjects | Architecture Computer programs Computer Science Dielectric constant Dielectric loss Dielectric properties Electrical Engineering Engineering Life Sciences Materials Science Mathematical analysis Microwaves Permittivity Silicon dioxide 物质 理论 研究 高温物理学 |
| title | Temperature Dependence of Microwave Dielectric Performance of Silica |
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